Growth of RuO2 thin layer on Ru(1010) studied by scanning tunneling microscopy

被引：8
作者：
Zhang, H. J. [1 ]
Lu, B. [1 ]
Lu, Y. H. [1 ]
Xu, Y. F. [1 ]
Li, H. Y. [1 ]
Bao, S. N. [1 ]
He, P. [1 ]
机构：
[1] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China
来源：
SURFACE SCIENCE | 2007年 / 601卷 / 11期
关键词：
ruthenium surface; ruthenium oxide thin layer; scanning tunneling microscopy;
D O I：
10.1016/j.susc.2007.03.014
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Investigations of growth of RoU(2) thin layer on Ru (10 (1) over bar0) by oxidation were performed by means of scanning tunneling microscopy (STM). The results showed that the morphologies and the structures of RuO2 thin film grown on Ru (10 (1) over bar0) depend crucially on the O-2 pressure and reaction temperature. At a sample temperature of about 600 K and an O-2 pressure of 5 x 10(-6) mbar, the oxidation of Ru(10 (1) over bar0) leads to formation of Ru-O chain structures, which can be attributed to the dynamical hindrance arisen from the repulsive dipolar interaction. This dynamical hindrance can be overcome, and the RuO2(100)-(1 x 1) phase, together with the RuO2(100)-c(2 x 2) patch, can be formed by increasing 02 pressure. Further increasing the sample temperature up to 760 K at the same 02 pressure, the oxidation results in formation of a RuO2(111) film over the RuO2(100) thin layer. (c) 2007 Published by Elsevier B.V.
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收藏
页码：2297 / 2301
页数：5
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