β-Ga2O3 trench Schottky diodes by low-damage Ga-atomic beam etching

被引：19

作者：

Dhara, Sushovan ^{[1
]}

Kalarickal, Nidhin Kurian ^{[1
]}

Dheenan, Ashok ^{[1
]}

Rahman, Sheikh Ifatur ^{[1
]}

Joishi, Chandan ^{[1
]}

Rajan, Siddharth ^{[1
,2
]}

机构：

[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

[2] Ohio State Univ, Dept Mat Sci & Engn, Columbus, OH 43210 USA

来源：

APPLIED PHYSICS LETTERS | 2023年 / 123卷 / 02期

关键词：

FIGURE-OF-MERIT; BARRIER DIODES; BALIGAS FIGURE; HETEROJUNCTION DIODES;

D O I：

10.1063/5.0151808

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

beta-Ga2O3 trench Schottky barrier diodes fabricated through a Gallium atomic beam etching technique with excellent field strength and power device figure of merit are demonstrated. Trench formation was accomplished by a low-damage Ga flux etch that enables near-ideal forward operating characteristics that are independent of fin orientation. The reverse breakdown field strength of greater than 5.10 MV/cm is demonstrated at a breakdown voltage of 1.45 kV. This result demonstrates the potential for Ga atomic beam etching and high-quality dielectric layers for improved performance in beta-Ga2O3 vertical power devices.

引用

页数：4

共 36 条

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