Transfer and detection of single electrons using metal-oxide-semiconductor field-effect transistors

被引:3
作者
Zhang, Wancheng [1 ]
Nishiguchi, Katsuhiko
Ono, Yukinori
Fujiwara, Akira
Yamaguchi, Hiroshi
Inokawa, Hiroshi
Takahashi, Yasuo
Wu, Nan-Jian
机构
[1] Nippon Telegraph & Tel Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
[2] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
[3] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
[4] Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 0600814, Japan
关键词
single-electron; MOSFET; turnstile; single-electron detection;
D O I
10.1093/ietele/e90-c.5.943
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A single-electron turnstile and electrometer circuit was fabricated on a silicon-on-insulator substrate. The turnstile, which is operated by opening and closing two metal-oxide-semiconductor field-effect transistors (MOSFETs) alternately, allows current quantization at 20 K due to single-electron transfer. Another MOSFET is placed at the drain side of the turnstile to form an electron storage island. Therefore, one-by-one electron entrance into the storage island from the turnstile can be detected as an abrupt change in the current of the electrometer, which is placed near the storage island and electrically coupled to it. The correspondence between the quantized current and the single-electron counting was confirmed.
引用
收藏
页码:943 / 948
页数:6
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