Integrated Stress and Process Calibration in Strained-Si Devices

被引：0

作者：

Yu, T-H ^{[1
]}

Tu, K-C ^{[1
]}

Sheu, Y-M ^{[1
]}

Diaz, C. H. ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Co, R&D, Hsinchu, Taiwan

来源：

2009 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2009年

关键词：

e-SiGe; strined-si; band gap narrowing; mobility; calibration; SILICON INVERSION-LAYERS; MOBILITY;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

We present a novel calibration methodology that (i) integrates dopant diffusion, mechanical strain and bandgap narrowing for accurate device short channel effect modeling and (ii) deploys stress dependent mobility model for robust device performance projection especially on effective drive current (Ideff). Good agreement is obtained between the model calibration and experimental measurements over the full gate length range examined. Moreover, a general mobility gain with respect to uniaxial stress is presented.

引用

页码：289 / 292

页数：4

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