Integrated Stress and Process Calibration in Strained-Si Devices

被引：0

作者：

Yu, T-H ^{[1
]}

Tu, K-C ^{[1
]}

Sheu, Y-M ^{[1
]}

Diaz, C. H. ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Co, R&D, Hsinchu, Taiwan

来源：

2009 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2009年

关键词：

e-SiGe; strined-si; band gap narrowing; mobility; calibration; SILICON INVERSION-LAYERS; MOBILITY;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

We present a novel calibration methodology that (i) integrates dopant diffusion, mechanical strain and bandgap narrowing for accurate device short channel effect modeling and (ii) deploys stress dependent mobility model for robust device performance projection especially on effective drive current (Ideff). Good agreement is obtained between the model calibration and experimental measurements over the full gate length range examined. Moreover, a general mobility gain with respect to uniaxial stress is presented.

引用

页码：289 / 292

页数：4

共 50 条

[21] Hole transport in UTB MOSFETs in strained-Si directly on insulator with strained-Si thickness less than 5 nm
Aberg, I
Hoyt, JL
IEEE ELECTRON DEVICE LETTERS, 2005, 26 (09) : 661 - 663
[22] Strained-si heterostructure field effect devices: Strain-engineering in CMOS technology
Maiti, C. K.
PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007, 2007, : 52 - 56
[23] Fabrication of strained-Si/strained-Ge heterostructures on insulator
Gomez, Leonardo
Canonico, Michael
Kim, Meekyung
Hashemi, Pouya
Hoyt, Judy L.
JOURNAL OF ELECTRONIC MATERIALS, 2008, 37 (03) : 240 - 244
[24] Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices
Uppal, Suresh
Kanoun, Mehdi
Varzgar, John B.
Chattopadhyay, Sanatan
Olsen, Sarah
O'Neill, Anthony
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2006, 135 (03): : 207 - 209
[25] Impact of underlap and mole-fraction on RF performance of strained-Si/Si1-xGex/strained-Si DG MOSFETs
Dutta, Arka
Koley, Kalyan
Sarkar, Chandan K.
SUPERLATTICES AND MICROSTRUCTURES, 2014, 75 : 634 - 646
[26] Stress-induced Degradation and Defect Studies in Strained-Si/SiGe MOSFETs
Mukherjee, Chhandak
Maiti, C. K.
PHYSICS OF SEMICONDUCTOR DEVICES, 2014, : 13 - 16
[27] Strained-Si heterostructure field effect transistors
Maiti, CK
Bera, LK
Chattopadhyay, S
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (11) : 1225 - 1246
[28] Ballistic Transport in SiGe and Strained-Si MOSFETs
Curatola, G.
Iannaccone, G.
JOURNAL OF COMPUTATIONAL ELECTRONICS, 2003, 2 (2-4) : 309 - 312
[29] Improved thermal stability and hole mobilities in a strained-Si/strained-Si1-yGey/strained-Si heterostructure grown on a relaxed Si1-xGex buffer
Gupta, S
Lee, ML
Isaacson, DM
Fitzgerald, EA
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 124 : 102 - 106
[30] Ballistic Transport in SiGe and Strained-Si MOSFETs
G. Curatola
G. Iannaccone
Journal of Computational Electronics, 2003, 2 : 309 - 312

← 1 2 3 4 5 →