Integrated Stress and Process Calibration in Strained-Si Devices

被引：0

作者：

Yu, T-H ^{[1
]}

Tu, K-C ^{[1
]}

Sheu, Y-M ^{[1
]}

Diaz, C. H. ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Co, R&D, Hsinchu, Taiwan

来源：

2009 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2009年

关键词：

e-SiGe; strined-si; band gap narrowing; mobility; calibration; SILICON INVERSION-LAYERS; MOBILITY;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

We present a novel calibration methodology that (i) integrates dopant diffusion, mechanical strain and bandgap narrowing for accurate device short channel effect modeling and (ii) deploys stress dependent mobility model for robust device performance projection especially on effective drive current (Ideff). Good agreement is obtained between the model calibration and experimental measurements over the full gate length range examined. Moreover, a general mobility gain with respect to uniaxial stress is presented.

引用

页码：289 / 292

页数：4

共 50 条

[1] Metrology challenges for 45 nm strained-Si devices
Vartanian, V
Sadaka, M
Zollner, S
Thean, AVY
White, T
Nguyen, BY
Zavala, M
McCormick, L
Prabhu, L
Eades, D
Parsons, S
Collard, H
Kim, K
Jiang, J
Dhandapani, V
Hildreth, J
Powers, R
Spencer, G
Ramani, N
Mogab, J
Kottke, M
Canonico, M
Xie, Q
Wang, XD
Vella, J
Contreras, L
Theodore, D
Lu, B
Kriske, T
Gregory, R
Liu, R
CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY 2005, 2005, 788 : 214 - 221
[2] Electron mobility model-for strained-Si devices
Dhar, S
Kosina, H
Palankovski, V
Ungersboeck, SE
Selberherr, S
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (04) : 527 - 533
[3] Special issue on strained-Si heterostructures and devices - Editorial
Maiti, CK
SOLID-STATE ELECTRONICS, 2004, 48 (08) : 1255 - 1255
[4] Influence of process flow on the characteristics of strained-Si nMOSFETs
Lam, K. T.
Wu, S. L.
Chang, S. J.
Wang, Y. P.
Liaw, U. H.
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2007, 10 (11) : H331 - H333
[5] Strained-Si devices and circuits for low-power applications
Kim, K
Joshi, RV
Chuang, CT
ISLPED'03: PROCEEDINGS OF THE 2003 INTERNATIONAL SYMPOSIUM ON LOW POWER ELECTRONICS AND DESIGN, 2003, : 180 - 183
[6] Mechanically strained strained-Si NMOSFETs
Maikap, S
Yu, CY
Jan, SR
Lee, MH
Liu, CW
IEEE ELECTRON DEVICE LETTERS, 2004, 25 (01) : 40 - 42
[7] Asymmetric strain in nanoscale patterned strained-Si/strained-Ge/strained-Si heterostructures on insulator
Hashemi, Pouya
Gomez, Leonardo
Hoyt, Judy L.
Robertson, Michael D.
Canonico, Michael
APPLIED PHYSICS LETTERS, 2007, 91 (08)
[8] Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices
Wei, JY
Maikap, S
Lee, MH
Lee, CC
Liu, CW
SOLID-STATE ELECTRONICS, 2006, 50 (02) : 109 - 113
[9] Strained-Si market booms
不详
MICRO, 2005, 23 (08): : 28 - 28
[10] Effects of hot carrier stress on reliability of strained-Si MOSFETs
Dey, S.
Agostinelli, M.
Prasad, C.
Wang, X.
Shifren, L.
2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUAL, 2006, : 461 - +

← 1 2 3 4 5 →