Nitride-MBE system for in situ synchrotron X-ray measurements

被引：9

作者：

Sasaki, Takuo ^{[1
]}

Ishikawa, Fumitaro ^{[2
]}

Yamaguchi, Tomohiro ^{[3
]}

Takahasi, Masamitu ^{[1
]}

机构：

[1] Japan Atom Energy Agcy, Quantum Beam Sci Ctr, Sayo, Hyogo 6795148, Japan

[2] Ehime Univ, Grad Sch Sci & Engn, Matsuyama, Ehime 7908577, Japan

[3] Kogakuin Univ, Dept Appl Phys, Hachioji, Tokyo 1920015, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 05期

关键词：

MOLECULAR-BEAM-EPITAXY; GAN; GROWTH; HETEROSTRUCTURES;

D O I：

10.7567/JJAP.55.05FB05

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A molecular beam epitaxy (MBE) chamber dedicated to nitride growth was developed at the synchrotron radiation facility SPring-8. This chamber has two beryllium windows for incident and outgoing X-rays, and is directly connected to an X-ray diffractometer, enabling in situ synchrotron X-ray measurements during the nitride growth. Experimental results on initial growth dynamics in GaN/SiC, AlN/SiC, and InN/GaN heteroepitaxy were presented. We achieved high-speed and high-sensitivity reciprocal space mapping with a thickness resolution of atomic-layer scale. This in situ measurement using the high-brilliance synchrotron light source will be useful for evaluating structural variations in the initial growth stage of nitride semiconductors. (C) 2016 The Japan Society of Applied Physics

引用

页数：6

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