Modified Gummel-Poon model for susceptibility prediction

被引:20
作者
Fiori, F [1 ]
Pozzolo, V [1 ]
机构
[1] Politecn Torino, Dept Elect, Microwave Elect Grp, I-10129 Turin, Italy
关键词
EMI; Gummel-Poon model; susceptibility of bipolar transistors;
D O I
10.1109/15.852414
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes a new model of the bipolar transistor bq. which the effects of RF interference on the de quiescent operating point upset can be computed. It is an improvement of the Gummel-Poon (GP) model used in circuit simulators like SPICE, in the sense that it takes into account distributed phenomena el;cited by RF interference like the de and ac crowding of the emitter current in the base region. The model, implemented in SPICE, has been experimentally validated and its efficienty has been demonstrated. The model does not require more measurements then those necessary to extract the parameters of the conventional GP model.
引用
收藏
页码:206 / 213
页数:8
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