Hall and field-effect mobilities of electrons accumulated at a lattice-matched ZnO/ScAIMgO4 heterointerface

被引：33

作者：

Suzuki, TI

Ohtomo, A

Tsukazaki, A

Sato, F

Nishii, J

Ohno, H

Kawasaki, M

机构：

[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan

[3] Tohoku Univ, Elect Commun Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

ADVANCED MATERIALS | 2004年 / 16卷 / 21期

关键词：

D O I：

10.1002/adma.200401018

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

At a lattice-matched ZnO/ScAIMgO(4) heterointerface, Hall and field-effect mobilities of grain-boundary-free ZnO channels have been simultaneously characterized under a gate electric field (E-G) applied through a ScAIMGO(4) dielectric gate. The field-effect mobility increased linearly with increasing EG (see Figure), clearly in contrast to the supralinear (exponential) dependence that has been previously reported for polycrystalline channels.

引用

收藏

页码：1887 / +

页数：5

相关论文

共 16 条

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].

ANDO, T ;

FOWLER, AB ;

STERN, F .

REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672

[2] Photodetecting properties of ZnO-based thin-film transistors [J].

Bae, HS ;

Yoon, MH ;

Kim, JH ;

Im, S .

APPLIED PHYSICS LETTERS, 2003, 83 (25) :5313-5315

[3] Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering [J].

Carcia, PF ;

McLean, RS ;

Reilly, MH ;

Nunes, G .

APPLIED PHYSICS LETTERS, 2003, 82 (07) :1117-1119

[4] HALL-MOBILITY OF ELECTRONS IN QUANTIZED ACCUMULATION LAYERS ON ZNO SURFACES [J].

GRINSHPAN, Y ;

NITZAN, M ;

GOLDSTEIN, Y .

PHYSICAL REVIEW B, 1979, 19 (02) :1098-1107

[5] ZnO-based transparent thin-film transistors [J].

Hoffman, RL ;

Norris, BJ ;

Wager, JF .

APPLIED PHYSICS LETTERS, 2003, 82 (05) :733-735

[6] Modeling of grain boundary barrier modulation in ZnO invisible thin film transistors [J].

Hossain, FM ;

Nishii, J ;

Takagi, S ;

Sugihara, T ;

Ohtomo, A ;

Fukumura, T ;

Koinuma, H ;

Ohno, H ;

Kawasaki, M .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4) :911-915

[7] Modeling and simulation of polycrystalline ZnO thin-film transistors [J].

Hossain, FM ;

Nishii, J ;

Takagi, S ;

Ohtomo, A ;

Fukumura, T ;

Fujioka, H ;

Ohno, H ;

Koinuma, H ;

Kawasaki, M .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (12) :7768-7777

[8] Enhancement-mode thin-film field-effect transistor using phosphorus-doped (Zn,Mg)O channel [J].

Kwon, Y ;

Li, Y ;

Heo, YW ;

Jones, M ;

Holloway, PH ;

Norton, DP ;

Park, ZV ;

Li, S .

APPLIED PHYSICS LETTERS, 2004, 84 (14) :2685-2687

[9] Transparent thin film transistors using ZnO as an active channel layer and their electrical properties [J].

Masuda, S ;

Kitamura, K ;

Okumura, Y ;

Miyatake, S ;

Tabata, H ;

Kawai, T .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (03) :1624-1630

[10] High mobility thin film transistors with transparent ZnO channels [J].

Nishii, J ;

Hossain, FM ;

Takagi, S ;

Aita, T ;

Saikusa, K ;

Ohmaki, Y ;

Ohkubo, I ;

Kishimoto, S ;

Ohtomo, A ;

Fukumura, T ;

Matsukura, F ;

Ohno, Y ;

Koinuma, H ;

Ohno, H ;

Kawasaki, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (4A) :L347-L349