Water relations in Azospirillum-inoculated wheat seedlings under osmotic stress

被引:0
|
作者
Creus, CM [1 ]
Sueldo, RJ [1 ]
Barassi, CA [1 ]
机构
[1] Univ Nacl Mar Plata, INTA, Fac Ciencias Agr, Unidad Integrada, RA-7620 Balcarce, Argentina
关键词
Azospirillum; drought; seedlings; water status; wheat;
D O I
10.1139/b97-178
中图分类号
Q94 [植物学];
学科分类号
071001 ;
摘要
Azospirillum has been shown to improve coleoptile growth in seedlings growing in darkness under osmotic stress. However, the changes in water relations that may occur in this experimental system have not yet been studied. Two-centimetre long Triticum aestivum cv. Buck Pucara and Triticum durum cv. Balcarceno-INTA seedlings were inoculated with viable or autoclaved (control) Azospirillum brasilense Sp. 245 bacteria, at approximately 10(8) cells per seedling. Three days after inoculation, seedlings were exposed to osmotic stress by immersing their roots in 20% polyethylene glycol 6000 for up to 72 h. Germination and seedling growth were at 20 degrees C in darkness. Shoots were excised after 72 h of stress, and water-status parameters were determined through pressure-volume analyses. While osmotic potential at full turgor remained constant, Azospirillum-stimulated growth in Buck Pucara seedlings was accompanied by significant decreases in osmotic potential and relative water content at zero turgor, in volumetric cell wall modulus of elasticity, and in absolute symplastic water volume and by a significant rise in apoplastic water fraction parameters. Except for a constant volumetric cell wall modulus of elasticity, similar results were obtained with Balcarceno-INTA seedlings. However, bacterial growth promotion was evident only in the less tolerant cv. Buck Pucara. Turgor at low water potential was higher in inoculated seedlings in both wheat cultivars under osmotic stress. These results are consistent with a better water status in Azospirillum-inoculated wheat seedlings under water stress, where both effects on cell wall elasticity and (or) apoplastic water are evident.
引用
收藏
页码:238 / 244
页数:7
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