共 16 条
[1]
AHN JH, 1998, IN PRESS JPN J APPL, V37
[4]
DAY S, 1995, INTEGR FERROELECTR, V7, P307
[5]
Origin of dielectric relaxation observed for Ba0.5Sr0.5TiO3 thin-film capacitor
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1996, 35 (9B)
:5178-5180
[6]
CURRENT-VOLTAGE CHARACTERISTICS OF ELECTRON-CYCLOTRON-RESONANCE SPUTTER-DEPOSITED SRTIO3 THIN-FILMS
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1994, 33 (9B)
:5255-5258
[7]
(Ba, Sr)TiO3 films prepared by liquid source chemical vapor deposition on Ru electrodes
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1996, 35 (9B)
:4880-4885
[8]
LEE JS, 1996, FERROELECTRIC THIN F, V5, P175
[9]
Lee KP, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P907, DOI 10.1109/IEDM.1995.499363
[10]
ELECTRICAL-PROPERTIES AND CRYSTAL-STRUCTURE OF (BA0.5SR0.5)TIO3 THIN-FILMS PREPARED ON PT/SIO2/SI BY RF MAGNETRON SPUTTERING
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1995, 34 (01)
:196-199