Aspects of Applying Flip-Chip Technology for SiC Power Devices Assembly

被引：0
|
作者：
Mysliwiec, Marcin [1 ,2 ]
Guziewicz, Marek [2 ]
Kisiel, Ryszard [1 ]
机构：
[1] Warsaw Univ Technol, Inst Microelect & Optoelect, Warsaw, Poland
[2] Inst Electr Mat Technol, Warsaw, Poland
来源：
2013 PROCEEDINGS OF THE 36TH INTERNATIONAL SPRING SEMINAR ON ELECTRONICS TECHNOLOGY (ISSE) | 2013年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The aim of our paper is to consider the possibility of applying flip-chip technology for assembly of SiC Schottky diode into a ceramic package. Ag micropowder was used for assembly SiC structure to DBC interposer of the ceramic package. Ag or Au balls were used as flip-chip connection material. The parameters of I-V characteristics were used as a quality factor to determine the Schottky diode after hermetization into ceramic package in comparison with bare SiC diode.
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页码：90 / 93
页数：4
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