Effect of annealing on the structural and UV photoluminescence properties of Sb-doped SnO2 films deposited on Al2O3 (0001) substrates by RF magnetron sputtering

被引：0
|
作者：
Feng, Xianjin [1 ]
Luo, Yi [1 ]
Luan, Caina [1 ]
机构：
[1] Shandong Univ, Sch Phys, Jinan 250100, Peoples R China
来源：
OPTICAL ENGINEERING | 2014年 / 53卷 / 11期
关键词：
Sb-doped SnO2 films; RF magnetron sputtering; photoluminescence; THIN-FILMS; ELECTRICAL-PROPERTIES; ELECTRONIC-STRUCTURE; TEMPERATURE; INDIUM;
D O I：
10.1117/1.OE.53.11.117111
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The antimony-doped tin oxide (SnO2: Sb) films have been deposited on the Al2O3 (0001) substrates by RF magnetron sputtering. The influence of annealing on the structural and photoluminescence (PL) properties of the SnO2: Sb films was investigated. The prepared samples were polycrystalline films having a rutile structure of pure SnO2 and a preferred orientation along the (110) direction, with an improvement in the film crystallinity observed after annealing. An ultraviolet PL peak near 334 nm was observed at room temperature both before and after annealing. The corresponding PL mechanism was discussed in detail. (C) 2014 Society of Photo-Optical Instrumentation Engineers (SPIE)
引用
收藏
页数：4
相关论文
共 50 条
  • [41] The structural, electrical and optical properties of ZnO/Al2O3 multilayer deposited on PET substrates by RF sputtering
    Khazamipour, N.
    Kabiri-Ameri-Aboutorabi, Sh.
    Asl-Solaimani, E.
    RENEWABLE ENERGY, 2013, 49 : 275 - 277
  • [42] Growth ambient dependence of defects, structural disorder and photoluminescence in SnO2 films deposited by reactive magnetron sputtering
    Kashyap, S.C. (skashyap@physics.iitd.ac.in), 1600, Elsevier Ltd (583):
  • [43] PROPERTIES OF RF-SPUTTERED AL2O3 FILMS DEPOSITED BY PLANAR MAGNETRON
    NOWICKI, RS
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 127 - 133
  • [44] Structural and optical properties of N-doped β-Ga2O3 films deposited by RF magnetron sputtering
    Zhang, Yijun
    Yan, Jinliang
    Li, Qingshan
    Qu, Chong
    Zhang, Liying
    Li, Ting
    PHYSICA B-CONDENSED MATTER, 2011, 406 (15-16) : 3079 - 3082
  • [45] Electrical and optical properties of Al-doped ZnO-SnO2 thin films deposited by RF magnetron sputtering
    Satoh, Kazuo
    Kakehi, Yoshiharu
    Okamoto, Akio
    Murakami, Shuichi
    Moriwaki, Kousuke
    Yotsuya, Tsutom
    THIN SOLID FILMS, 2008, 516 (17) : 5814 - 5817
  • [46] Effect of annealing temperature on the crystalline structure, growth behaviour and properties of SnO2:Sb thin films prepared by radio frequency (RF)-magnetron sputtering
    Zheng, Mindong
    Ni, Jiamiao
    Liang, Fei
    Wang, Moo-Chin
    Zhao, Xiujian
    JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 663 : 371 - 378
  • [47] SnO2:F thin films deposited by RF magnetron sputtering: effect of the SnF2 amount in the target on the physical properties
    de Moure-Flores, F.
    Guillen-Cervantes, A.
    Nieto-Zepeda, K. E.
    Quinones-Galvan, J. G.
    Hernandez-Hernandez, A.
    Olvera, M. de la L.
    Melendez-Lira, M.
    REVISTA MEXICANA DE FISICA, 2013, 59 (04) : 335 - 338
  • [48] Effect of annealing on the properties of N-doped ZnO films deposited by RF magnetron sputtering
    Wang, Jinzhong
    Elamurugu, Elangovan
    Sallet, Vincent
    Jomard, Francois
    Lusson, Alain
    do Rego, Ana M. Botelho
    Barquinha, Pedro
    Goncalves, Goncalo
    Martins, Rodrigo
    Fortunato, Elvira
    APPLIED SURFACE SCIENCE, 2008, 254 (22) : 7178 - 7182
  • [49] Effects of low-temperature-buffer, rf-power, and annealing on structural and optical properties of ZnO/Al2O3(0001) thin films grown by rf-magnetron sputtering
    Liu, H. F.
    Chua, S. J.
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (02)
  • [50] Combined effects of substrate temperature and post annealing temperature on structural, optical and electrical properties of Sb-doped SnO2 films
    Xiong, H.
    Zhu, B. L.
    Zhang, J. Q.
    Wu, J.
    Shi, X. W.
    Sun, W. Q.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2024, 997
12345