Effect of annealing on the structural and UV photoluminescence properties of Sb-doped SnO2 films deposited on Al2O3 (0001) substrates by RF magnetron sputtering

被引：0
作者：
Feng, Xianjin [1 ]
Luo, Yi [1 ]
Luan, Caina [1 ]
机构：
[1] Shandong Univ, Sch Phys, Jinan 250100, Peoples R China
来源：
OPTICAL ENGINEERING | 2014年 / 53卷 / 11期
关键词：
Sb-doped SnO2 films; RF magnetron sputtering; photoluminescence; THIN-FILMS; ELECTRICAL-PROPERTIES; ELECTRONIC-STRUCTURE; TEMPERATURE; INDIUM;
D O I：
10.1117/1.OE.53.11.117111
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The antimony-doped tin oxide (SnO2: Sb) films have been deposited on the Al2O3 (0001) substrates by RF magnetron sputtering. The influence of annealing on the structural and photoluminescence (PL) properties of the SnO2: Sb films was investigated. The prepared samples were polycrystalline films having a rutile structure of pure SnO2 and a preferred orientation along the (110) direction, with an improvement in the film crystallinity observed after annealing. An ultraviolet PL peak near 334 nm was observed at room temperature both before and after annealing. The corresponding PL mechanism was discussed in detail. (C) 2014 Society of Photo-Optical Instrumentation Engineers (SPIE)
引用
收藏
页数：4
相关论文
共 20 条
[1]   Room temperature ferromagnetism in Sm-doped SnO2 PLD film [J].
Cao, Ensi ;
Zhang, Yongjia ;
Hao, Wentao ;
Peng, Hua ;
Sun, Lihui ;
Hu, Jifan .
APPLIED SURFACE SCIENCE, 2013, 282 :376-383
[2]   ELECTRICAL PROPERTIES OF HIGH-QUALITY STANNIC OXIDE CRYSTALS [J].
FONSTAD, CG ;
REDIKER, RH .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) :2911-&
[3]   Role of osmium in the electrical transport mechanism of polycrystalline tin oxide thin films [J].
Forleo, A ;
Capone, S ;
Epifani, M ;
Siciliano, P ;
Rella, R .
APPLIED PHYSICS LETTERS, 2004, 84 (05) :744-746
[4]   Structural studies of nanocrystalline SnO2 doped with antimony:: XRD and Mossbauer spectroscopy [J].
Grzeta, B ;
Tkalcec, E ;
Goebbert, C ;
Takeda, M ;
Takahashi, M ;
Nomura, K ;
Jaksic, M .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2002, 63 (05) :765-772
[5]   Luminescence of SnO2 thin films prepared by spin-coating method [J].
Gu, F ;
Wang, SF ;
Lü, MK ;
Cheng, XF ;
Liu, SW ;
Zhou, GJ ;
Xu, D ;
Yuan, DR .
JOURNAL OF CRYSTAL GROWTH, 2004, 262 (1-4) :182-185
[6]   A novel transparent pn+ junction based on indium tin oxides [J].
Ji, ZG ;
He, ZJ ;
Song, YL ;
Liu, K ;
Xiang, Y .
THIN SOLID FILMS, 2004, 460 (1-2) :324-326
[7]   Effect of incorporating nonlanthanoidal indium on optical properties of ferroelectric Bi4Ti3O12 thin films [J].
Jia, Caihong ;
Chen, Yonghai ;
Ding, Linghong ;
Zhang, Weifeng .
APPLIED SURFACE SCIENCE, 2007, 253 (24) :9506-9512
[8]   Structural and electrical properties of SnO2 films grown on r-cut sapphire at different substrate temperature by MOCVD [J].
Luan, Caina ;
Zhu, Zhen ;
Mi, Wei ;
Ma, Jin .
VACUUM, 2014, 99 :110-114
[9]   UV-violet photoluminescence emitted from SnO2:Sb thin films at different temperature [J].
Ma, J ;
Wang, YH ;
Ji, F ;
Yu, XH ;
Ma, HL .
MATERIALS LETTERS, 2005, 59 (17) :2142-2145
[10]   THE STABILITY OF ZINC-OXIDE TRANSPARENT ELECTRODES FABRICATED BY RF MAGNETRON SPUTTERING [J].
MINAMI, T ;
NANTO, H ;
SHOOJI, S ;
TAKATA, S .
THIN SOLID FILMS, 1984, 111 (02) :167-174
12