Radiation-induced segregation and precipitation behaviours around cascade clusters under electron irradiation

被引：1

作者：

Sueishi, Y ^{[1
]}

Sakaguchi, N ^{[1
]}

Shibayama, T ^{[1
]}

Kinoshita, H ^{[1
]}

Takahashi, H ^{[1
]}

机构：

[1] Hokkaido Univ, Ctr Adv Res Energy Technol, Kita Ku, Sapporo, Hokkaido 0608628, Japan

来源：

JOURNAL OF ELECTRON MICROSCOPY | 2003年 / 52卷 / 01期

关键词：

radiation-induced segregation; radiation-induced precipitation; cascade cluster; ion irradiation; electron irradiation;

D O I：

10.1093/jmicro/52.1.63

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

We have investigated the formation of cascade clusters and structural changes in them by means of electron irradiation following ion irradiation in an austenitic stainless steel. Almost all of the cascade clusters, which were introduced by the ion irradiation, grew to form interstitial-type dislocation loops or vacancy-type stacking fault tetrahedra after electron irradiation at 623 K, whereas a few of the dot-type clusters remained in the matrix. It was possible to recognize the concentration of Ni and Si by radiation-induced segregation around the dot-type clusters. After electron irradiation at 773 K, we found that some cascade clusters became precipitates (delta-Ni2Si) due to radiation-induced precipitation. This suggests that the cascade clusters could directly become precipitation sites during irradiation.

引用

页码：63 / 68

页数：6

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