Current status of Ga2O3 power devices

被引：192

作者：

Higashiwaki, Masataka ^{[1
]}

Murakami, Hisashi ^{[2
]}

Kumagai, Yoshinao ^{[2
]}

Kuramata, Akito ^{[3
]}

机构：

[1] Natl Inst Informat & Commun Technol, Koganei, Tokyo 1848795, Japan

[2] Tokyo Univ Agr & Technol, Dept Appl Chem, Koganei, Tokyo 1848588, Japan

[3] Tamura Corp, Sayama, Osaka 3501328, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 12期

关键词：

BETA-GA2O3; SINGLE-CRYSTALS; SCHOTTKY; GROWTH; FIELD; EDGE;

D O I：

10.7567/JJAP.55.1202A1

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Gallium oxide (Ga2O3) is an emerging wide-bandgap semiconductor for high-power, low-loss transistors and diodes by virtue of its excellent material properties and suitability for mass production. In this paper, we begin by discussing the material properties of Ga2O3 that make it an attractive alternative to not only Si but also other wide-bandgap materials such as SiC and GaN. State-of-the-art Ga2O3-based devices that have been fabricated to date demonstrate the performance potential for power electronics applications. (C) 2016 The Japan Society of Applied Physics

引用

页数：7

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