Spin-dependent transport in double-barrier magnetic tunnel junction with Dresselhaus spin-orbit interaction

被引：0
|
作者：
BabazadehHabashi, L. [1 ]
Kanjouri, F. [2 ]
Elahi, S. M. [1 ]
机构：
[1] Islamic Azad Univ, Sci & Res Branch, Dept Phys, Tehran, Iran
[2] Kharazmi Univ, Fac Phys, Karaj, Iran
来源：
INDIAN JOURNAL OF PHYSICS | 2014年 / 88卷 / 08期
关键词：
Dresselhaus spin-orbit coupling; Tunneling magnetoresistance; Magnetic tunnel junctions; RASHBA;
D O I：
10.1007/s12648-014-0476-8
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have theoretically investigated the effect of Dresselhaus spin-orbit coupling on spin-transport properties of ferromagnet/insulator/semiconductor/insulator/ferromagnet (Fe/Al2O3/SM/Al2O3/Fe) heterostructure. Based on the two band model and nearly-free-electron apptoximation, tunnel current and magnetoresistance are calculated as a function of bias voltage. Our calculations are carried out for three different semiconductors such as InAs, AlAs and InP. It is shown that the Dresselhaus spin-orbit interaction, in general, leads to enhancement of tunneling magnetoresistance. It is also shown that it strongly depends on the thickness of layers, bias voltage and electron effective mass in semiconductor layers.
引用
收藏
页码：837 / 841
页数：5
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