Optical properties of InAlAs quantum dots in an AlGaAs matrix

被引：9

作者：

Tsatsul'nikov, AF

Egorov, AY

Kop'ev, PS

Kovsh, AR

Ledentsov, NN

Maximov, MV

Suvorova, AA

Ustinov, VM

Volovik, BV

Zhukov, AE

Grundmann, M

Bimberg, D

Alferov, ZI

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

APPLIED SURFACE SCIENCE | 1998年 / 123卷

关键词：

nanostructures; quantum dots; molecular-beam epitaxy; photoluminescence;

D O I：

10.1016/S0169-4332(97)00493-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Structural and optical properties of InxAl1-xAs quantum dots (QD) embedded in an Al0.30Ga0.70As matrix are studied as a function of InAs mole fraction (x). Decreasing of x results in a sequential disappearance of bound electron and hole states in the QDs. There is a range of indium compositions were photoluminescence is determined by type-II optical transitions between electrons localized in a Al0.3Ga0.7As layer and holes localized in the QDs. (C) 1998 Elsevier Science B.V.

引用

收藏

页码：381 / 384

页数：4

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