Inkjet-Printed In-Ga-Zn Oxide Thin-Film Transistors with Laser Spike Annealing

被引：26

作者：

Huang, Hang ^{[1
]}

Hu, Hailong ^{[1
]}

Zhu, Jingguang ^{[1
]}

Guo, Tailiang ^{[1
]}

机构：

[1] Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350002, Peoples R China

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2017年 / 46卷 / 07期

关键词：

Indium-gallium-zinc oxide; low temperature; inkjet printing; laser spike annealing; thin-film transistors; HIGH-PERFORMANCE; TEMPERATURE FABRICATION; SEMICONDUCTORS; IMPROVEMENT;

D O I：

10.1007/s11664-017-5440-x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Inkjet-printed In-Ga-Zn oxide (IGZO) thin-film transistors (TFTs) have been fabricated at low temperature using laser spike annealing (LSA) treatment. Coffee-ring effects during the printing process were eliminated to form uniform IGZO films by simply increasing the concentration of solute in the ink. The impact of LSA on the TFT performance was studied. The field-effect mobility, threshold voltage, and on/off current ratio were greatly influenced by the LSA treatment. With laser scanning at 1 mm/s for 40 times, the 30-nm-thick IGZO TFT baked at 200A degrees C showed mobility of 1.5 cm(2)/V s, threshold voltage of -8.5 V, and on/off current ratio > 10(6). Our findings demonstrate the feasibility of rapid LSA treatment of low-temperature inkjet-printed oxide semiconductor transistors, being comparable to those obtained by conventional high-temperature annealing.

引用

页码：4497 / 4502

页数：6

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