High performance 1.55μm polarisation-insensitive semiconductor optical amplifier based on low-tensile-strained bulk GaInAsP

被引：51

作者：

Emery, JY

Ducellier, T

Bachmann, M

Doussiere, P

Pommereau, F

Ngo, R

Gaborit, F

Goldstein, L

Laube, G

Barrau, J

机构：

[1] Alcatel Alsthom Rech, Alcatel Corp Res Ctr, F-91460 Marcoussis, France

[2] Alcatel Telecom Res Ctr, D-70435 Stuttgart, Germany

[3] Inst Natl Sci Appl, CNRS, Phys Solides Lab, F-31077 Toulouse, France

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 12期

关键词：

semiconductor junction lasers; fibre amplifiers;

D O I：

10.1049/el:19970703

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High performance, polarisation-independent semiconductor optical amplifiers based on low-tensile-strained separate confinement heterostructures and integrated with a double core taper have been realised. Fibre-to-fibre gain as large as 29dB, with TE-TM polarisation sensitivity as low as 0.3dB and an output saturation power of similar to 9dBm are currently achieved.

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页码：1083 / 1084

页数：2

相关论文

共 9 条

[1] 1.55-MU-M POLARIZATION-INDEPENDENT SEMICONDUCTOR OPTICAL AMPLIFIER WITH 25-DB FIBER TO FIBER GAIN [J].

DOUSSIERE, P ;

GARABEDIAN, P ;

GRAVER, C ;

BONNEVIE, D ;

FILLION, T ;

DEROUIN, E ;

MONNOT, M ;

PROVOST, JG ;

LECLERC, D ;

KLENK, M .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (02) :170-172

[2]

EMERY JY, 1996, EUROPEAN C OPT COMM

[3] 1.55-MU-M POLARIZATION-INSENSITIVE OPTICAL AMPLIFIER WITH STRAIN-BALANCED SUPERLATTICE ACTIVE LAYER [J].

GODEFROY, A ;

LECORRE, A ;

CLEROT, F ;

SALAUN, S ;

LOUALICHE, S ;

SIMON, JC ;

HENRY, L ;

VAUDRY, C ;

KEROMNES, JC ;

JOULIE, G ;

LAMOULER, P .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (05) :473-475

[4] POLARIZATION INSENSITIVE SEMICONDUCTOR-LASER AMPLIFIERS WITH TENSILE STRAINED INGAASP/INGAASP MULTIPLE QUANTUM-WELL STRUCTURE [J].

JOMA, M ;

HORIKAWA, H ;

XU, CQ ;

YAMADA, K ;

KATOH, Y ;

KAMIJOH, T .

APPLIED PHYSICS LETTERS, 1993, 62 (02) :121-122

[5] 1.56-MU-M INGAASP/INP TAPERED ACTIVE LAYER MULTIQUANTUM-WELL LASER WITH IMPROVED COUPLING TO CLEAVED SINGLEMODE FIBER [J].

LEALMAN, IF ;

RIVERS, LJ ;

HARLOW, MJ ;

PERRIN, SD ;

ROBERTSON, MJ .

ELECTRONICS LETTERS, 1994, 30 (11) :857-859

[6] POLARIZATION-INSENSITIVE OPTICAL AMPLIFIER WITH TENSILE-STRAINED-BARRIER MQW STRUCTURE [J].

MAGARI, K ;

OKAMOTO, M ;

SUZUKI, Y ;

SATO, K ;

NOGUCHI, Y ;

MIKAMI, O .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (03) :695-702

[7] 1.5 MU-M MULTI-QUANTUM-WELL SEMICONDUCTOR OPTICAL AMPLIFIER WITH TENSILE AND COMPRESSIVELY STRAINED WELLS FOR POLARIZATION-INDEPENDENT GAIN [J].

NEWKIRK, MA ;

MILLER, BI ;

KOREN, U ;

YOUNG, MG ;

CHIEN, M ;

JOPSON, RM ;

BURRUS, CA .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (04) :406-408

[8] 1.55 mu m polarisation insensitive InGaAsP strained MQW optical amplifier integrated with short spot-size converters [J].

Sigogne, D ;

Ougazzaden, A ;

Meichenin, D ;

Mersali, B ;

Carenco, A ;

Simon, JC ;

Valiente, I ;

Vassallo, C ;

Billes, L .

ELECTRONICS LETTERS, 1996, 32 (15) :1403-1405

[9] POLARIZATION INSENSITIVE MULTIPLE QUANTUM-WELL LASER-AMPLIFIERS FOR THE 1300 NM WINDOW [J].

TIEMEIJER, LF ;

THIJS, PJA ;

VANDONGEN, T ;

SLOOTWEG, RWM ;

VANDERHEIJDEN, JMM ;

BINSMA, JJM ;

KRIJN, MPCM .

APPLIED PHYSICS LETTERS, 1993, 62 (08) :826-828