Electrical properties of p-type Zn:Ga2O3 thin films

被引：22

作者：

Chikoidze, Ekaterine ^{[1
]}

Sartel, Corinne ^{[1
]}

Yamano, Hayate ^{[2
]}

Chi, Zeyu ^{[1
]}

Bouchez, Guillaume ^{[1
]}

Jomard, Francois ^{[1
]}

Sallet, Vincent ^{[1
]}

Guillot, Gerard ^{[3
]}

Boukheddaden, Kamel ^{[1
]}

Perez-Tomas, Amador ^{[4
]}

Tchelidze, Tamar ^{[5
]}

Dumont, Yves ^{[1
]}

机构：

[1] Univ Paris Saclay, Grp Etud Matiere Condensee GEMaC, UVSQ CNRS, 45 Ave Etats-Unis, F-78035 Saclay, France

[2] Danube Univ Krems, Dept Integrated Sensor Syst, A-3500 Krems, Austria

[3] Univ Lyon, Inst Nanotechnol Lyon INL UMR5270, CNRS, ECL,UCBL,INSA Lyon,CPE, F-69621 Villeurbanne Cedex, France

[4] Catalan Inst Nanosci & Nanotechnol ICN2, CSIC & Barcelona Inst Sci & Technol, Barcelona, Spain

[5] Ivane Javakhishvili Tbilisi State Univ, Fac Exact & Nat Sci, Dept Phys, 3 Ave Tchavtchavadze, GE-0179 Tbilisi, Georgia

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2022年 / 40卷 / 04期

关键词：

DOPED BETA-GA2O3; GROWTH;

D O I：

10.1116/6.0001766

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ultra-wide bandgap gallium oxide (similar to 5 eV) has emerged as a novel semiconductor platform for extending the current limits of power electronics and deep ultraviolet optoelectronics at a predicted fraction of cost. Finding effective acceptor dopant for gallium oxide is a hot issue. One element that quite often is considered as a potential candidate is zinc. A number of experimental works have reported the signature of Zn-acceptor, but the direct evidence of hole conductivity was missing. In this work, p-type Zn-doped Ga2O3 thin films were grown by the metal-organic chemical vapour deposition technique on sapphire substrates. By high-temperature Hall effect measurements, Zn related acceptor level ionization energy as 0.77 eV above the valence band maximum was determined. Additionally, we have carried out the simulation study regarding the application of the Zn:Ga2O3 semi-insulating material, to be used as a guard ring for improving the high voltage performance of the Schottky diode structure. Published under an exclusive license by the AVS

引用

页数：7

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