Identification of extremely radiative nature of AlN by time-resolved photoluminescence

被引：32

作者：

Onuma, T. ^{[1
]}

Hazu, K. ^{[1
]}

Uedono, A. ^{[2
]}

Sota, T. ^{[3
]}

Chichibu, S. F. ^{[1
]}

机构：

[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Ctr Adv Nitride Technol, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Univ Tsukuba, Inst Appl Phys, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan

[3] Waseda Univ, Dept Elect Engn & Biosci, Shinjuku Ku, Tokyo 1698555, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 06期

关键词：

aluminium compounds; excitons; high-speed optical techniques; III-V semiconductors; photoluminescence; polaritons; radiative lifetimes; semiconductor epitaxial layers; time resolved spectra; wide band gap semiconductors; EXCITON LUMINESCENCE; DYNAMICS;

D O I：

10.1063/1.3284653

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Extremely radiative nature of high-quality AlN single crystalline epilayers was identified by means of far ultraviolet time-resolved photoluminescence using a frequency-quadrupled femtosecond Al2O3:Ti laser. The gross radiative lifetimes of a free excitonic polariton emission as short as 10 ps at 7 K and 180 ps at 300 K were revealed, which are the shortest ever reported for bulk semiconductor materials.

引用

页数：3

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