Growth by molecular beam epitaxy and electrical characterization of GaAs nanowires

被引：65
作者：
Piccin, M.
Bais, G.
Grillo, V.
Jabeen, F.
De Franceschi, S.
Carlino, E.
Lazzarino, M.
Romanato, F.
Businaro, L.
Rubini, S.
Martelli, F.
Franciosi, A.
机构：
[1] CNR, INFM, TASC, Lab Nazl, I-34012 Trieste, Italy
[2] Univ Trieste, Ctr Excellence Nanostruct Mat, I-34127 Trieste, Italy
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2007年 / 37卷 / 1-2期
关键词：
GaAs; nanowires; molecular beam epitaxy; electron microscopy; electronic transport;
D O I：
10.1016/j.physe.2006.07.002
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report on structural and electrical properties of GaAs nanowires (NWs) grown by molecular beam epitaxy (MBE) on GaAs and SiO2 substrates using Au as growth catalyst. Au-Ga particles are observed on the top of the NWs by transmission electron microscopy (TEM). In most of the observed cases, individual particles contain two Au-Ga compositions, in particular orthorhombic AuGa and beta' hexagonal Au7Ga2. The wires grown on GaAs are regularly shaped and tidily oriented on both (1 0 0) and (1 1 1)B substrates. TEM also reveals that the NWs have a wurtzite lattice structure. Electrical transport measurements indicate that nominally undoped NWs are weakly n-type while both Be- and Si-doped wires show p-type behaviour. The effect of the lattice structure on impurity incorporation is briefly discussed. (C) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：134 / 137
页数：4
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