Atomic-layer epitaxy of silicon on (100) surface

被引：4

作者：

Satoh, Y ^{[1
]}

Ikeda, K ^{[1
]}

Sugahara, S ^{[1
]}

Matsumura, M ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528550, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 10期

关键词：

atomic-layer epitaxy; silicon; AFM; surface morphology;

D O I：

10.1143/JJAP.39.5732

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomic-layer epitaxy (ALE) of Si on the (100) surface has been studied. The ALE temperature window for the (100) surface was as wide as that for the (111) surface, under optimum hydrogen pressure conditions. The grown film surface was smooth only within the upper half of the window. Surface roughness increased with ALE execution cycle, due to the combined dynamic effects of excess growth, etching and surface migration of adsorbates within an execution cycle, but took an extremely small value under a special set of ALE parameters.

引用

页码：5732 / 5736

页数：5

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