GaN HEMT based Ku-band Power Amplifier MMIC

被引：3

作者：

Imran, Mohd. ^{[1
]}

Gupta, Parul ^{[1
]}

Reeta ^{[1
]}

Mishra, Meena ^{[1
]}

机构：

[1] Solid State Phys Lab SSPL, Delhi, India

来源：

2022 IEEE MICROWAVES, ANTENNAS, AND PROPAGATION CONFERENCE, MAPCON | 2022年

关键词：

Power Amplifier; Ku band; GaN Technology; Monolithic Microwave Integrated Circuit (MMIC);

D O I：

10.1109/MAPCON56011.2022.10047238

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a Monolithic Microwave Integrated power amplifier circuit designed and fabricated with using 150nm Gallium Nitride on SiC process of UMS, France. This MMIC PA exhibits 39 dBm saturated output power in pulsed operating conditions with over 29 dB power gain and 35 percent power added efficiency (PAE). The chip area of this PA is 3.8 mm x 2 mm. This PA is suitable for integration in MMIC RF front-end chip for phased array radar applications.

引用

页码：792 / 795

页数：4

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