Growth and characterization of n-ZnO/p-GaN nanorods on silicon for the fabrication of heterojunction diodes

被引：2

作者：

Shen, Guan-Hung ^{[1
]}

Hong, Franklin Chau-Nan ^{[1
,2
,3
,4
]}

机构：

[1] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

[3] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan

[4] Natl Cheng Kung Univ, NCKU Res Ctr Energy Technol & Strategy, Tainan 70101, Taiwan

来源：

THIN SOLID FILMS | 2014年 / 570卷

关键词：

ZnO; Hydrothermal; Diode; P-TYPE GAN; CHEMICAL-VAPOR-DEPOSITION; MOLECULAR-BEAM EPITAXY; THIN-FILMS; NANOWIRE ARRAYS; EMISSION;

D O I：

10.1016/j.tsf.2014.02.114

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A heterojunction n-ZnO/p-GaN diode device was fabricated and characterized on Si (111) substrate. Vertically-aligned Mg-doped GaN nanorods (NRs) were grown on Si (111) by plasma assisted chemical vapor deposition. Intrinsic n-type ZnO was subsequently grown on top of p-GaN nanorods by hydrothermal method at low temperature. The effects of precursor concentrations on themorphology and optical properties of ZnO nanostructures were investigated. Various ZnO nanostructures could be synthesized to obtain different heterojunction nanostructures. The high resolution transmission electron microscopy and selected area electron diffraction results further verified that the GaNNRs were single crystals with the growth orientation along [ 0001], and the epitaxial wurtzite ZnO films were grown on GaN NRs. The n-ZnO film/p-GaN NR heterojunction diodes were thus fabricated. Diode-like rectifying behavior was actually observed with a leakage current of less than 2.0 x 10(-4) A at-20 V bias, a forward current of 7.2 x 10(-3) A at 20 V bias, and the turn-on voltage at around 5.6 V. (C) 2014 Elsevier B. V. All rights reserved.

引用

页码：330 / 335

页数：6

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