Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si

被引:9
作者
Ozden, Burcu [1 ]
Yang, Chungman [1 ]
Tong, Fei [1 ]
Khanal, Min P. [1 ]
Mirkhani, Vahid [1 ]
Sk, Mobbassar Hassan [1 ]
Ahyi, Ayayi Claude [1 ]
Park, Minseo [1 ]
机构
[1] Auburn Univ, Dept Phys, Auburn, AL 36849 USA
关键词
BAND-GAP; BOWING PARAMETER; CATHODOLUMINESCENCE; DEFECTS; AL(X)GA1-XN; COLLAPSE; SI(111); GATE; ALN;
D O I
10.1063/1.4900869
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have demonstrated that the depth-dependent defect distribution of the deep level traps in the AlGaN/GaN high electron mobility transistor (HEMT) epi-structures can be analyzed by using the depth-resolved ultra-violet (UV) spectroscopic photo current-voltage (IV) (DR-UV-SPIV). It is of great importance to analyze deep level defects in the AlGaN/GaN HEMT structure, since it is recognized that deep level defects are the main source for causing current collapse phenomena leading to reduced device reliability. The AlGaN/GaN HEMT epi-layers were grown on a 6 in. Si wafer by metal-organic chemical vapor deposition. The DR-UV-SPIV measurement was performed using a monochromatized UV light illumination from a Xe lamp. The key strength of the DR-UV-SPIV is its ability to provide information on the depth-dependent electrically active defect distribution along the epi-layer growth direction. The DR-UV-SPIV data showed variations in the depth-dependent defect distribution across the wafer. As a result, rapid feedback on the depth-dependent electrical homogeneity of the electrically active defect distribution in the AlGaN/ GaN HEMT epi-structure grown on a Si wafer with minimal sample preparation can be elucidated from the DR-UV-SPIV in combination with our previously demonstrated spectroscopic photo-IV measurement with the sub-bandgap excitation. (C) 2014 AIP Publishing LLC.
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页数:4
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