Polycrystalline silicon thin-film transistors fabricated by defect reduction methods

被引：33
|
作者：
Watakabe, H [1 ]
Sameshima, T [1 ]
机构：
[1] Tokyo Univ Agr & Technol, Dept Elect & Elect Engn, Tokyo 1848588, Japan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 12期
关键词：
carrier density; carrier mobility; defect; interface; H2O vapor; laser crystallization; oxygen plasma;
D O I：
10.1109/TED.2002.805234
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Fabrication of n-channel polycrystalline silicon thin-film transistors (poly-Si TFTs) at a low temperature is reported. 13.56 MHz-oxygen plasma at a 100 W, 130 Pa at 250 degreesC for 5 min, and heat treatment at 260 degreesC with 1.3 X 10(6)-Pa-H2O vapor for 3 h were applied to reduction of the density of defect states in 25-nm-thick silicon films crystallized by irradiation of a 30 ns-pulsed XeCl excimer laser. Defect reduction was numerically analyzed. Those treatments resulted in a high carrier mobility of 830 cm(2)/Vs and a low threshold voltage of 1.5 V at a laser crystallization energy density of 285 mJ/cm(2).
引用
收藏
页码：2217 / 2221
页数：5
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