Tunable two-dimensional electron gas at the surface of thermoelectric material In4Se3

被引：16

作者：

Fukutani, K. ^{[1
,2
]}

Sato, T. ^{[1
]}

Galiy, P. V. ^{[3
]}

Sugawara, K. ^{[4
]}

Takahashi, T. ^{[1
,4
]}

机构：

[1] Tohoku Univ, Dept Phys, Sendai, Miyagi 9808578, Japan

[2] Tohoku Univ, Inst Excellence Higher Educ, Sendai, Miyagi 9808576, Japan

[3] I Franko Lviv Natl Univ, Dept Elect, UA-79005 Lvov, Ukraine

[4] Tohoku Univ, Adv Inst Mat Res, WPI Res Ctr, Sendai, Miyagi 9808577, Japan

来源：

PHYSICAL REVIEW B | 2016年 / 93卷 / 20期

基金：

日本学术振兴会;

关键词：

SRTIO3; BI2SE3; MERIT;

D O I：

10.1103/PhysRevB.93.205156

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the discovery of two-dimensional electron gas (2DEG) at the surface of thermoelectric material In4Se3 by angle-resolved photoemission spectroscopy. The observed 2DEG exhibits a nearly isotropic band dispersion with a considerably small effective mass of m* = 0.16 m(0), and its carrier density shows a significant temperature dependence, leading to unconventional metal-semiconductor transition at the surface. The observed wide-range thermal tunability of 2DEG in In4Se3 gives rise to additional degrees of freedom to better control the surface carriers of semiconductors.

引用

页数：6

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