Modeling the Growth of Single-Wall Carbon Nanotubes

被引:36
作者
Amara, Hakim [1 ]
Bichara, Christophe [2 ]
机构
[1] Off Natl Etud & Rech Aerosp, CNRS, Lab Etud Microstruct, BP 72, F-92322 Chatillon, France
[2] Aix Marseille Univ, CNRS, CINAM, Campus Luminy, Marseille, France
关键词
SWNT; Growth mechanisms; Modeling; CVD; MOLECULAR-DYNAMICS; CATALYST COMPOSITION; SUBSURFACE CARBON; INITIAL-STAGES; NUCLEATION; CHIRALITY; GRAPHENE; SIMULATION; SOLUBILITY; MECHANISMS;
D O I
10.1007/s41061-017-0141-8
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
More than 20 years after their discovery, our understanding of the growth mechanisms of single-wall carbon nanotubes is still incomplete, in spite of a large number of investigations motivated by potential rewards in many possible applications. Among the many techniques used to solve this challenging puzzle, computer simulations can directly address an atomic scale that is hardly accessible by other experiments, and thereby support or invalidate different ideas, assumptions, or models. In this paper, we review some aspects of the computer simulation and theoretical approaches dedicated to the study of single-wall carbon nanotube growth, and suggest some ways towards a better control of the synthesis processes by chemical vapor deposition.
引用
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页数:23
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