Compositional and Interfacial Engineering Yield High-Performance and Stable p-i-n Perovskite Solar Cells and Mini-Modules

被引:81
作者
Dagar, Janardan [1 ,2 ]
Fenske, Markus [3 ,4 ]
Al-Ashouri, Amran [1 ,5 ]
Schultz, Christof [3 ]
Li, Bor [1 ,5 ]
Koebler, Hans [1 ,6 ]
Munir, Rahim [1 ,2 ]
Parmasivam, Gopinath [1 ,2 ]
Li, Jinzhao [1 ,2 ]
Levine, Igal [7 ]
Merdasa, Aboma [1 ,2 ]
Kegelmann, Lukas [1 ,5 ]
Naesstroem, Hampus [1 ,2 ]
Marquez, Jose A. [1 ]
Unold, Thomas [1 ]
Toebbens, Daniel M. [8 ]
Schlatmann, Rutger [1 ,4 ]
Stegemann, Bert [3 ]
Abate, Antonio [1 ,6 ]
Albrecht, Steve [1 ,5 ,9 ]
Unger, Eva [1 ,2 ,10 ,11 ]
机构
[1] Helmholtz Zentrum Berlin, HySPRINT Innovat Lab, D-12489 Berlin, Germany
[2] Young Investigator Grp Hybrid Mat Format & Scalin, D-12489 Berlin, Germany
[3] Univ Appl Sci, HTW Berlin, D-12459 Berlin, Germany
[4] PVcomB Helmholtz Zentrum Berlin Mat & Energie Gmb, D-12489 Berlin, Germany
[5] Helmholtz Zentrum Berlin, Young Investigator Grp Perovskite Tandem Solar Ce, D-12489 Berlin, Germany
[6] Young Investigator Grp Act Mat & Interfaces Stabl, D-12489 Berlin, Germany
[7] Helmholtz Zentrum Berlin, HySPRINT Innovat Lab, Inst Silicon Photovolta, D-5 Berlin, Germany
[8] Helmholtz Zentrum Berlin Materialien & Energie HZ, Dept Struct & Dynam Energy Mat, D-12489 Berlin, Germany
[9] Tech Univ Berlin, Fac Elect Engn & Comp Sci 4, D-10587 Berlin, Germany
[10] Lund Univ, Dept Chem, S-22362 Lund, Sweden
[11] Lund Univ, NanoLund, S-22362 Lund, Sweden
关键词
self-assembled monolayer; interface modification; FACl additive; triple cation perovskite; p-i-n solar cell; laser-interconnection; module; DEVICE PERFORMANCE; TRANSPORT LAYERS; EFFICIENCY; HYSTERESIS; STABILITY;
D O I
10.1021/acsami.0c17893
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Through the optimization of the perovskite precursor composition and interfaces to selective contacts, we achieved a p-i-n-type perovskite solar cell (PSC) with a 22.3% power conversion efficiency (PCE). This is a new performance record for a PSC with an absorber bandgap of 1.63 eV. We demonstrate that the high device performance originates from a synergy between (1) an improved perovskite absorber quality when introducing formamidinium chloride (FACl) as an additive in the "triple cation" Cs(0.05)FA(0.79)MA(0.16)PbBr(0.51)I(2.49) (Cs-MAFA) perovskite precursor ink, (2) an increased open-circuit voltage, V-OC, due to reduced recombination losses when using a lithium fluoride (LiF) interfacial buffer layer, and (3) high-quality hole-selective contacts with a self-assembled monolayer (SAM) of [2-(9H-carbazol-9-yl)ethyl]phosphonic acid (2PACz) on ITO electrodes. While all devices exhibit a high performance after fabrication, as determined from current-density voltage, J-V, measurements, substantial differences in device performance become apparent when considering longer-term stability data. A reduced long-term stability of devices with the introduction of a LiF interlayer is compensated for by using FACl as an additive in the metal-halide perovskite thin-film deposition. Optimized devices maintained about 80% of the initial average PCE during maximum power point (MPP) tracking for >700 h. We scaled the optimized device architecture to larger areas and achieved fully laser patterned series-interconnected mini-modules with a PCE of 19.4% for a 2.2 cm(2) active area. A robust device architecture and reproducible deposition methods are fundamental for high performance and stable large-area single junction and tandem modules based on PSCs.
引用
收藏
页码:13022 / 13033
页数:12
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