Measuring Point Defect Density in Individual Carbon Nanotubes Using Polarization-Dependent X-ray Microscopy

被引：30

作者：

Felten, Alexandre ^{[1
]}

Gillon, Xavier ^{[1
]}

Gulas, Michal ^{[1
]}

Pireaux, Jean-Jacques ^{[1
]}

Ke, Xiaoxing ^{[2
]}

Van Tendeloo, Gustaaf ^{[2
]}

Bittencourt, Carla ^{[3
]}

Najafi, Ebrahim ^{[4
]}

Hitchcock, Adam. P. ^{[4
]}

机构：

[1] FUNDP, PMR, B-5000 Namur, Belgium

[2] Univ Antwerp, EMAT, B-2610 Antwerp, Belgium

[3] Univ Mons, LCIA, B-7000 Mons, Belgium

[4] McMaster Univ, Hamilton, ON L8S 4M1, Canada

来源：

ACS NANO | 2010年 / 4卷 / 08期

基金：

加拿大自然科学与工程研究理事会;

关键词：

NEXAFS; carbon nanotube; X-ray spectromicroscopy; irradiation; ION-IRRADIATION; SPECTROSCOPY; ELECTRON;

D O I：

10.1021/nn1002248

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The presence of defects in carbon nanotubes strongly modifies their electrical, mechanical, and chemical properties. It was long thought undesirable, but recent experiments have shown that introduction of structural defects using ion or electron irradiation can lead to novel nanodevices. We demonstrate a method for detecting and quantifying point defect density in individual carbon nanotubes (CNTs) based on measuring the polarization dependence (linear dichroism) of the C 1s -> pi* transition at specific locations along individual CNTs with a scanning transmission X-ray microscope (STXM). We show that STXM can be used to probe defect density in individual CNTs with high spatial resolution. The quantitative relationship between ion dose, nanotube diameter, and defect density was explored by purposely irradiating selected sections of nanotubes with kiloelectronvolt (keV) Ga+ ions. Our results establish polarization-dependent X-ray microscopy as a new and very powerful characterization technique for carbon nanotubes and other anisotropic nanostructures.

引用

页码：4431 / 4436

页数：6

共 33 条

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