Study of defects in implanted silica glass by depth profiling Positron Annihilation Spectroscopy

被引:13
作者
Brusa, R. S. [1 ]
Mariazzi, S. [1 ]
Ravelli, L. [1 ,3 ]
Mazzoldi, P. [2 ]
Mattei, G. [2 ]
Egger, W. [3 ]
Hugenschmidt, C. [4 ,5 ]
Loewe, B. [4 ,5 ]
Pikart, P. [4 ,5 ]
Macchi, C. [6 ]
Somoza, A. [6 ]
机构
[1] Univ Trent, Dipartimento Fis, CNISM, I-38050 Trento, Italy
[2] Univ Padua, Dipartimento Fis, CNISM, I-35131 Padua, Italy
[3] Univ Bunderswehr Munchen, Inst Angew Phys & Messtech, D-85577 Neubiberg, Germany
[4] Tech Univ Munich, Phys Dept E21, D-85747 Garching, Germany
[5] Tech Univ Munich, FRMII, D-85747 Garching, Germany
[6] CICPBA, Buenos Aires, DF, Argentina
关键词
Silica glass; Positronium; Positrons; Ion implantation; BEAM; ELECTRONS; SI;
D O I
10.1016/j.nimb.2010.05.084
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Positron Annihilation Spectroscopy (PAS) performed with continuous and pulsed positron beams allows to characterize the size of the intrinsic nano-voids in silica glass, their in depth modification after ion implantation and their decoration by implanted ions. Three complementary PAS techniques, lifetime spectroscopy (LS), Doppler broadening spectroscopy (DBS) and coincidence Doppler broadening spectroscopy (CDBS) will be illustrated by presenting, as a case study, measurements obtained on virgin and gold implanted silica glass. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:3186 / 3190
页数:5
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