Study of defects in implanted silica glass by depth profiling Positron Annihilation Spectroscopy

被引：13

作者：

Brusa, R. S. ^{[1
]}

Mariazzi, S. ^{[1
]}

Ravelli, L. ^{[1
,3
]}

Mazzoldi, P. ^{[2
]}

Mattei, G. ^{[2
]}

Egger, W. ^{[3
]}

Hugenschmidt, C. ^{[4
,5
]}

Loewe, B. ^{[4
,5
]}

Pikart, P. ^{[4
,5
]}

Macchi, C. ^{[6
]}

Somoza, A. ^{[6
]}

机构：

[1] Univ Trent, Dipartimento Fis, CNISM, I-38050 Trento, Italy

[2] Univ Padua, Dipartimento Fis, CNISM, I-35131 Padua, Italy

[3] Univ Bunderswehr Munchen, Inst Angew Phys & Messtech, D-85577 Neubiberg, Germany

[4] Tech Univ Munich, Phys Dept E21, D-85747 Garching, Germany

[5] Tech Univ Munich, FRMII, D-85747 Garching, Germany

[6] CICPBA, Buenos Aires, DF, Argentina

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2010年 / 268卷 / 19期

关键词：

Silica glass; Positronium; Positrons; Ion implantation; BEAM; ELECTRONS; SI;

D O I：

10.1016/j.nimb.2010.05.084

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Positron Annihilation Spectroscopy (PAS) performed with continuous and pulsed positron beams allows to characterize the size of the intrinsic nano-voids in silica glass, their in depth modification after ion implantation and their decoration by implanted ions. Three complementary PAS techniques, lifetime spectroscopy (LS), Doppler broadening spectroscopy (DBS) and coincidence Doppler broadening spectroscopy (CDBS) will be illustrated by presenting, as a case study, measurements obtained on virgin and gold implanted silica glass. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：3186 / 3190

页数：5

共 27 条

[1] Theoretical and experimental study of positron annihilation with core electrons in solids [J].

Alatalo, M ;

Barbiellini, B ;

Hakala, M ;

Kauppinen, H ;

Korhonen, T ;

Puska, MJ ;

Saarinen, K ;

Hautojarvi, P ;

Nieminen, RM .

PHYSICAL REVIEW B, 1996, 54 (04) :2397-2409

[2] Increased elemental specificity of positron annihilation spectra [J].

AsokaKumar, P ;

Alatalo, M ;

Ghosh, VJ ;

Kruseman, AC ;

Nielsen, B ;

Lynn, KG .

PHYSICAL REVIEW LETTERS, 1996, 77 (10) :2097-2100

[3] CHARACTERIZATION OF DEFECTS IN SI AND SIO2-SI USING POSITRONS [J].

ASOKAKUMAR, P ;

LYNN, KG ;

WELCH, DO .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (09) :4935-4982

[4] Structural modifications in ion-implanted silicate glasses [J].

Battaglin, G ;

Arnold, GW ;

Mattei, G ;

Mazzoldi, P ;

Dran, JC .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (12) :8040-8049

[5] A MONTE-CARLO COMPUTER-PROGRAM FOR THE TRANSPORT OF ENERGETIC IONS IN AMORPHOUS TARGETS [J].

BIERSACK, JP ;

HAGGMARK, LG .

NUCLEAR INSTRUMENTS & METHODS, 1980, 174 (1-2) :257-269

[6] Decorated vacancy clusters in Si and thin C films grown on Si studied by depth profiling positron annihilation spectroscopies [J].

Brusa, R. S. .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 10, 2007, 4 (10) :3614-3619

[7] Doppler-broadening measurements of positron annihilation with high-momentum electrons in pure elements [J].

Brusa, RS ;

Deng, W ;

Karwasz, GP ;

Zecca, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 194 (04) :519-531

[8] Formation of vacancy clusters and cavities in He-implanted silicon studied by slow-positron annihilation spectroscopy [J].

Brusa, RS ;

Karwasz, GP ;

Tiengo, N ;

Zecca, A ;

Corni, F ;

Tonini, R ;

Ottaviani, G .

PHYSICAL REVIEW B, 2000, 61 (15) :10154-10166

[9]

Dupasquier A., 1995, Positron spectroscopy of solids

[10] THE TEMPERATURE-DEPENDENCE OF POSITRON LIFETIMES IN SOLID PIVALIC ACID [J].

ELDRUP, M ;

LIGHTBODY, D ;

SHERWOOD, JN .

CHEMICAL PHYSICS, 1981, 63 (1-2) :51-58

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