Spectroscopic ellipsometry study on strain relaxation of CdTe/GaAs(001) epitaxial films

被引：2
作者：
Kim, KJ [1 ]
Lee, MH
Kang, TW
Han, MS
机构：
[1] Konkuk Univ, Dept Phys, Seoul 143701, South Korea
[2] Dongguk Univ, Dept Phys, Seoul 100715, South Korea
来源：
SOLID STATE COMMUNICATIONS | 1998年 / 106卷 / 09期
关键词：
D O I：
10.1016/S0038-1098(98)00102-1
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Energy shifts of interband-transition edges with strain relaxation of CdTe(1 1 1) epitaxial films grown on GaAs(0 0 1) substrates were detected using spectroscopic ellipsometry measurements at various layer thicknesses. The E-1, E-1 + Delta(1) and E-2 edges for the films were found to shift to higher energies from those of bulk CdTe at the layer thicknesses below 1.3 mu m. Result of a quantitative line-shape analysis on the transition edges indicates that the strain-induced energy shifts are proportional to the strength of the residual in-plane compressive strain in the film. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：597 / 600
页数：4
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