Micropattern-gated diamond field emitter array

被引:13
作者
Kang, WP
Wisitsora-at, A
Davidson, JL
Howell, M
Kerns, DV
Li, Q
Xu, JF
Kim, CK
机构
[1] Vanderbilt Univ, Dept Elect & Comp Engn, Nashville, TN 37235 USA
[2] E China Normal Univ, Dept Elect Sci & Technol, Shanghai 200062, Peoples R China
[3] Soonchunhyang Univ, Dept Elect & Elect Engn, Asan, Choongnam, South Korea
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 02期
关键词
D O I
10.1116/1.589893
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Gated diamond field emitter arrays with ultralow operating voltage and high emission current have been developed. Two types of built-in gated diamond field emitters have been successfully fabricated: (i) a gated structure created by molding and self-align technique, and (ii) a cap-gated structure created by molding and electrostatic bonding. Depending on the diamond tip's composition and surface treatment, high emission current at very low operating voltage (varying from <10 V to >10 V) can be designed to meet various applications. The built-in gated diamond tips have a stable emission current at a fixed gate voltage. Current fluctuation is found to be about 1.1% for low emission current and less than 10% for higher emission current. Emission stability is considerably more stable than silicon emitters. (C) 1998 American Vacuum Society. [S0734-211X(98)07002-4].
引用
收藏
页码:732 / 735
页数:4
相关论文
共 12 条
[1]   FIELD-EMISSION FROM ION-MILLED DIAMOND FILMS ON SI [J].
ASANO, T ;
OOBUCHI, Y ;
KATSUMATA, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02) :431-434
[2]   PHOTOELECTRIC-EMISSION FROM NEGATIVE-ELECTRON-AFFINITY DIAMOND(111) SURFACES - EXCITON BREAKUP VERSUS CONDUCTION-BAND EMISSION [J].
BANDIS, C ;
PATE, BB .
PHYSICAL REVIEW B, 1995, 52 (16) :12056-12071
[3]  
Givargizov E. I., 1994, Physics-Doklady, V39, P766
[4]   SILICON TIPS WITH DIAMOND PARTICLES ON THEM - NEW FIELD EMITTERS [J].
GIVARGIZOV, EI .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02) :414-417
[5]   Physical characterization of diamond pyramidal microtip emitters [J].
Kang, WP ;
Davidson, JL ;
George, MA ;
Milosavljevic, I ;
Li, Q ;
Xu, JF ;
Kerns, DV .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (02) :460-463
[6]   Micropatterned polycrystalline diamond field emitter vacuum diode arrays [J].
Kang, WP ;
Davidson, JL ;
Howell, M ;
Bhuva, B ;
Kinser, DL ;
Kerns, DV ;
Li, Q ;
Xu, JF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03) :2068-2071
[7]  
Kang WP, 1997, IVMC'97 - 1997 10TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, TECHNICAL DIGEST, P107
[8]   FABRICATION AND CHARACTERIZATION OF SILICON FIELD-EMISSION DIODES AND TRIODES [J].
LI, Q ;
YUAN, MY ;
KANG, WP ;
TANG, SH ;
XU, JF ;
ZHANG, D ;
WU, JL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02) :676-679
[9]  
LI Q, 1994, J VAC SCI TECHNOL B, V12, P1
[10]   ELECTRON-EMISSION FROM DIAMOND-COATED SILICON FIELD EMITTERS [J].
LIU, J ;
ZHIRNOV, VV ;
WOJAK, GJ ;
MYERS, AF ;
CHOI, WB ;
HREN, JJ ;
WOLTER, SD ;
MCCLURE, MT ;
STONER, BR ;
GLASS, JT .
APPLIED PHYSICS LETTERS, 1994, 65 (22) :2842-2844