Study of ZnCdSe/ZnSe quantum-wells grown by molecular-beam epitaxy on ZnSe substrates

被引：0
作者：
Kozlovsky, VI
Trubenko, PA
Dianov, EM
Korostelin, YV
Krysa, AB
Shapkin, PV
机构：
[1] Russian Acad Sci, GPI, Fiber Opt Res Ctr, Moscow 117942, Russia
[2] Russian Acad Sci, PN Lebedev Phys Inst, Moscow 117942, Russia
来源：
JOURNAL OF CRYSTAL GROWTH | 1998年 / 184卷
关键词：
ZnSe; homoepitaxy; ZnCdSe/ZnSe MQW; cathodoluminescence; VCSEL;
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
ZnCdSe/ZnSe multiple quantum-well(MQW) structures were grown by MBE on ZnSe(0 0 1) substrates prepared by seeded chemical-vapour transport (SCVT) in hydrogen. Scanning force microscopy (SFM) analysis of these structures was performed. A method for the preparation of the substrate surface was found that resulted in a decrease of the root-mean-square (RMS) roughness of the MQW structure surfaces, down to 1 nm. For these structures intense cathodoluminescence (CL) from the QWs was observed. By e-beam pumping a microcavity, pulse lasing was achieved at room temperature(RT). (C) 1998 Elsevier Science B.V. All rights reserved.
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页码：872 / 876
页数：5
相关论文
共 8 条
[1]  
Basov NG, 1996, LASER PHYS, V6, P608
[2]   II-VI blue/green laser diodes on ZnSe substrates [J].
Boney, C ;
Yu, Z ;
Rowland, WH ;
Hughes, WC ;
Cook, JW ;
Schetzina, JF ;
Cantwell, G ;
Harsch, WC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03) :2259-2262
[3]   Impact of surface stoichiometry control during the initial stages of growth on the stacking fault concentration in ZnSe epilayers grown by molecular beam epitaxy [J].
Jeon, MH ;
Calhoun, LC ;
Gila, BP ;
Ludwig, MH ;
Park, RM .
APPLIED PHYSICS LETTERS, 1996, 69 (14) :2107-2109
[4]   Vapour growth and characterization of bulk ZnSe single crystals [J].
Korostelin, YV ;
Kozlovsky, VI ;
Nasibov, AS ;
Shapkin, PV .
JOURNAL OF CRYSTAL GROWTH, 1996, 161 (1-4) :51-59
[5]   Study of ZnCdSe/ZnSe quantum wells grown by molecular-beam epitaxy on ZnSe substrates [J].
Kozlovskii, VI ;
Artemov, AS ;
Korostelin, YV ;
Krysa, AB ;
Shapkin, PV ;
Trubenko, PA ;
Dianov, EM ;
Shcherbakov, EA .
SEMICONDUCTORS, 1997, 31 (06) :545-550
[6]   Electron-beam pumped laser structures based on MBE grown ZnCdSe/ZnSe superlattices [J].
Kozlovsky, VI ;
Shcherbakov, EA ;
Dianov, EM ;
Krysa, AB ;
Nasibov, AS ;
Trubenko, PA .
JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) :609-612
[7]   Molecular-beam epitaxy of high-quality ZnSe homo-epitaxial layers on solid-phase recrystallized substrates [J].
Tournie, E ;
Brunet, P ;
Faurie, JP ;
Triboulet, R ;
Ndap, JO .
APPLIED PHYSICS LETTERS, 1996, 69 (21) :3221-3223
[8]   (Cd,Zn)Se multi-quantum-well LEDs: Homoepitaxy on ZnSe substrates and heteroepitaxy on (In,Ga)As/GaAs buffer layers [J].
Wenisch, H ;
Schull, K ;
Behr, T ;
Hommel, D ;
Landwehr, G ;
Siche, D ;
Rudolph, P ;
Hartmann, H .
JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) :26-31
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