Oxygen Induced Limitation on Grain Growth in RF Sputtered Indium Tin Oxide Thin Films

被引：0

作者：

Lamsal, Buddhi Sagar ^{[1
]}

Huh, Yung ^{[2
]}

Dubey, Mukul ^{[1
]}

Manoj, K. C. ^{[1
]}

Venkatesan, Swaminathan ^{[1
]}

Qiao, Qiquan ^{[1
]}

Galipeau, David ^{[1
]}

Fan, Qi Hua ^{[1
]}

机构：

[1] South Dakota State Univ, Dept Elect Engn & Comp Sci, Brookings, SD 57007 USA

[2] South Dakota State Univ, Dept Phys, Brookings, SD 57007 USA

来源：

2013 IEEE INTERNATIONAL CONFERENCE ON ELECTRO-INFORMATION TECHNOLOGY (EIT 2013) | 2013年

基金：

美国国家科学基金会;

关键词：

SUBSTRATE-TEMPERATURE; OPTICAL-PROPERTIES;

D O I：

暂无

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

Indium tin oxide (ITO) thin films were deposited onto glass substrates by RF magnetron sputtering to study variation of grain growth in pure argon and 99% argon plus 1% oxygen at different substrate temperatures. The average grain size increased with the increasing substrate temperature in pure argon. However, in oxygen presence environment the grain growth is limited at above 150 degrees C. The films optoelectronic properties were evaluated. It was found that 200 nm ITO films prepared at 220 degrees C substrate temperature in pure argon possessed optimum sheet resistance of 10 LI/sq. The transmittance of ITO films was enhanced with increasing the substrate temperature in pure argon but limited by the presence of excess oxygen.

引用

页数：4

共 50 条

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