Nucleation and growth of CBD-CdS thin films on ultrathin aluminium layers and annealing induced doping

被引:5
作者
Ghosh, Biswajit [1 ]
Singh, Balwant Kr [1 ]
Banerjee, Pushan [1 ]
Das, Subrata [1 ]
机构
[1] Jadavpur Univ, Sch Energy Studies, Kolkata 700032, India
来源
OPTIK | 2016年 / 127卷 / 10期
关键词
CdS; Chemical bath deposition; Doping; Secondary ion mass spectrometry; Scanning electron micrograph; CADMIUM-SULFIDE; DEPOSITION; CU;
D O I
10.1016/j.ijleo.2016.01.099
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Using chemical bath deposition CdS films were grown onto vacuum evaporated ultrathin aluminium films (25 nm). The Al/CdS bilayers thus formed were subjected to heat treatment at the temperatures 300 degrees C, 400 degrees C for 4min and 500 degrees C for 90s in a muffle furnace to facilitate aluminium to diffuse into the CdS films. XRD studies ascertained the shift of the lattice constant owing to introduction of Al into CdS crystal lattice by annealing CdS:Al at 400 degrees C. Secondary ion mass spectrometry indicated almost uniform distribution of aluminium atoms throughout the bulk of CdS subject to annealing. SEM images showed the distinct changes in surface morphology of CdS, grown on aluminium surface, from that on bare glass substrate. CdS:Al films (annealed at 400 degrees C) showed higher transmission in the visible range compared to pristine CdS. (C) 2016 Elsevier GmbH. All rights reserved.
引用
收藏
页码:4413 / 4417
页数:5
相关论文
共 23 条
[1]   Photoelectronic properties of (Cu, Fe, Al) incorporated CdS thin films [J].
Afify, HH ;
El Zawawi, IK ;
Battisha, IK .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1999, 10 (07) :497-502
[2]   Photocatalysis and photoelectrocatalysis using (CdS-ZnS)/TiO2 combined photocatalysts [J].
Antoniadou, Maria ;
Daskalaki, Vasileia M. ;
Balis, Nikolaos ;
Kondarides, Dimitris I. ;
Kordulis, Christos ;
Lianos, Panagiotis .
APPLIED CATALYSIS B-ENVIRONMENTAL, 2011, 107 (1-2) :188-196
[3]   THE MECHANISM OF ELECTRODEPOSITION OF CADMIUM-SULFIDE ON INERT METALS FROM DIMETHYLSULFOXIDE SOLUTION [J].
BARANSKI, AS ;
FAWCETT, WR ;
MCDONALD, AC .
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1984, 160 (1-2) :271-287
[4]   Fabrication of vacuum-evaporated SnS/CdS heterojunction for PV applications [J].
Ghosh, B. ;
Das, M. ;
Banerjee, R. ;
Das, S. .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2008, 92 (09) :1099-1104
[5]   Fabrication of CdS/SnS heterostructured device using successive ionic layer adsorption and reaction deposited SnS [J].
Ghosh, Biswajit ;
Chowdhury, Sumit ;
Banerjee, Pushan ;
Das, Subrata .
THIN SOLID FILMS, 2011, 519 (10) :3368-3372
[6]   FORMATION AND PROPERTIES OF IN-DOPED HIGH-CONDUCTIVITY CDSE EVAPORATED FILM [J].
HAYASHI, T ;
SAEKI, R ;
SUZUKI, T ;
FUKAYA, M ;
EMA, Y .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (11) :5719-5723
[7]   FORMATION AND PROPERTIES OF IN-DOPED HIGH-CONDUCTIVITY CDS FILM [J].
HAYASHI, T ;
NISHIKURA, T ;
SUZUKI, T ;
EMA, Y .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (07) :3542-3550
[8]   BURSTEIN-MOSS SHIFT IN HEAVILY IN-DOPED EVAPORATED CDS LAYERS [J].
JAGER, H ;
SEIPP, E .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) :425-427
[9]  
Kallaf H., 2008, J PHYS D, V41
[10]   Modification of spectroscopic properties of nanostructured CdS thin films by Cu+ ion implantation [J].
Kumar, S. Saravana ;
Khadar, M. Abdul ;
Nair, R. Madhusoodanan ;
Ravindran, T. R. ;
Nair, K. G. M. .
PHYSICA B-CONDENSED MATTER, 2010, 405 (12) :2715-2719