Physics of electronic transport in two-dimensional materials for future FETs

被引：0

作者：

Fischetti, M. V. ^{[1
]}

Vandehberghe, W. G. ^{[1
]}

机构：

[1] Univ Texas Dallas, 800 W Campbell Rd, Richardson, TX 75080 USA

来源：

2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We discuss some basic physical properties of electron transport in two-dimensional materials. First, we discuss how the predicted thermodynamic instability of 2D crystals may influence charge transport via the coupling of electrons with acoustic flexural modes. We then review the properties of suspended and supported graphene and its ribbons and consider the problem of evaluating correctly the electron-phonon coupling in the case of phosphorene. Finally, we discuss the main features of 2D topological insulators and their possible use in transistors.

引用

页数：4

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