AC stress and electronic effects on SET switching of HfO2 RRAM

被引：2

作者：

Liu, Jen-Chieh ^{[1
,2
,3
]}

Magyari-Kope, Blanka ^{[3
]}

Qin, Shengjun ^{[3
]}

Zheng, Xin ^{[3
]}

Wong, H. -S. Philip ^{[3
]}

Hou, Tuo-Hung ^{[1
,2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

[3] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 09期

关键词：

TOTAL-ENERGY CALCULATIONS; RAPID PREDICTION; PART I; DIFFUSION; BREAKDOWN; DISTURB;

D O I：

10.1063/1.4991576

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An AC stress test was performed to investigate the accompanying electronic effects in a HfO2 resistive random access memory during the SET transition, which featured a sudden decrease in resistance. Comparing the DC and AC measurement results indicated the pronounced influence of interrupted stress on both the mean values and variations of time to SET. First-principles calculations suggested that the charge states (+2, +1, or neutral) of oxygen vacancies affect the migration barrier for forming oxygen vacancy clusters. Therefore, a charge-state-dependent SET model is proposed to include the additional electronic effects induced by the dynamics of electron trapping and detrapping in oxygen vacancies during AC stress. A trimodal Weibull fitting based on the proposed model reproduced the experimental time to SET distributions obtained in a wide range of AC stress conditions. Published by AIP Publishing.

引用

页数：5

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