Indium tin oxide surface treatments for improvement of organic light-emitting diode performance

被引：24
|
作者：
Li, CN
Djurisic, AB
Kwong, CY
Lai, PT
Chan, WK
Liu, SY
机构：
[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
[2] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[3] Univ Hong Kong, Dept Chem, Hong Kong, Hong Kong, Peoples R China
[4] Jilin Univ, Natl Lab Integrated Optoelect, Changchun 130023, Peoples R China
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2005年 / 80卷 / 02期
关键词：
D O I：
10.1007/s00339-003-2146-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have systematically investigated the influence of UV ozone and acid (HCl) treatments (separate and combined) of the surface of indium tin oxide (ITO) on the ITO parameters and the performance of organic light-emitting diodes (OLEDs) fabricated on the treated substrates. The ITO substrates were characterized by Hall measurements, Seebeck coefficient measurements and surface-probe microscopy. After ITO characterization, two types of devices (ITO/NPB/rubrene/Alq(3)/LiF/Al and ITO/TPD/rubrene/Alq(3)/LiF/Al) were fabricated on the differently treated substrates. It was found that in both cases the optimal treatment was HCl followed by UV ozone, which resulted in the lowest turn-on voltage and the highest luminous efficiency. The maximum luminous efficiency in the ITO/NPB/rubrene/Alq(3)/LiF/Al OLED with HCl followed by UV ozone treatment was 2.15 lm/W compared to 1.46 lm/W with UV ozone treatment only.
引用
收藏
页码：301 / 307
页数：7
相关论文
共 50 条
  • [1] Indium tin oxide surface treatments for improvement of organic light-emitting diode performance
    C.N. Li
    A.B. Djurišić
    C.Y. Kwong
    P.T. Lai
    W.K. Chan
    S.Y. Liu
    Applied Physics A, 2005, 80 : 301 - 307
  • [2] Organic light-emitting diode performance enhancement via indium tin oxide glass surface modification
    Ling, Ing-may
    Chen, Liang-Huei
    CURRENT APPLIED PHYSICS, 2010, 10 (01) : 346 - 350
  • [3] Performance improvement of organic light emitting diode by low energy ion beam treatment of the indium tin oxide surface
    Qiu, Y
    Zhang, DQ
    Wang, LD
    Wu, GS
    SYNTHETIC METALS, 2001, 125 (03) : 415 - 418
  • [4] Relationship between surface roughness of indium tin oxide and leakage current of organic light-emitting diode
    Kim, Ki-Beom
    Tak, Yoon-Heung
    Han, Yoon-Soo
    Baik, Kwang-Heum
    Yoon, Myung-Hee
    Lee, Moon-Ho
    1600, Japan Society of Applied Physics (42):
  • [5] Relationship between surface roughness of indium tin oxide and leakage current of organic light-emitting diode
    Kim, KB
    Tak, YH
    Han, YS
    Baik, KH
    Yoon, MH
    Lee, MH
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (4B): : L438 - L440
  • [6] Surface modification and characterization of indium–tin oxide for organic light-emitting devices
    L. Li
    J. S. Yu
    S. L. Lou
    W. Z. Li
    Y. D. Jiang
    W. Li
    Journal of Materials Science: Materials in Electronics, 2008, 19 : 1214 - 1221
  • [7] Light-emitting indium tin oxide
    Noriaki Horiuchi
    Nature Photonics, 2011, 5 : 332 - 332
  • [8] DC sputtered indium-tin oxide transparent cathode for organic light-emitting diode
    Chen, HY
    Qiu, CF
    Wong, M
    Kwok, HS
    IEEE ELECTRON DEVICE LETTERS, 2003, 24 (05) : 315 - 317
  • [9] Surface modification and characterization of indium-tin oxide for organic light-emitting devices
    Zhong, Z. Y.
    Jiang, Y. D.
    JOURNAL OF COLLOID AND INTERFACE SCIENCE, 2006, 302 (02) : 613 - 619
  • [10] Surface conditioning of indium-tin oxide anodes for organic light-emitting diodes
    Kim, JS
    Cacialli, F
    Friend, R
    THIN SOLID FILMS, 2003, 445 (02) : 358 - 366
12345