Hot-electron noise in InAlAs/InGaAs/InAlAs quantum wells

被引：0
|
作者：
Aninkevicius, V [1 ]
Liberis, J [1 ]
Matulioniene, I [1 ]
Matulionis, A [1 ]
Sakalas, P [1 ]
Henle, B [1 ]
Kohn, E [1 ]
Berntgen, J [1 ]
机构：
[1] Lithuania Acad Sci, Inst Semicond Phys, LT-2600 Vilnius, Lithuania
来源：
NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE | 1997年
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D O I：
暂无
中图分类号：
O42 [声学];
学科分类号：
070206 ; 082403 ;
摘要：
We report on hot-electron microwave-noise measurements for InP-lattice matched InAlAs/InGaAs structures with two-dimensional electron gas (2DEG) subjected to high electric field applied parallel to the heterointerfaces. The excess noise specific to heavily-doped structures is resolved at 300 K and 80 K lattice temperatures. Location and origin of the excess noise is investigated.
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页码：71 / 74
页数：4
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