An RF Circuit Model of a Quantum Point Contact

被引:1
|
作者
Kang, Sungmu [1 ]
Rutherglen, Chris [1 ]
Rouhi, Nima [1 ]
Burke, Peter [1 ]
Pfeiffer, L. N. [2 ]
West, K. W. [2 ]
机构
[1] Univ Calif Irvine, Dept Elect Engn & Comp Sci, Integrated Nanosyst Res Facil, Irvine, CA 92697 USA
[2] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
基金
美国国家科学基金会;
关键词
GaAs; Quantum Point Contact; RF circuit model; TRANSPORT;
D O I
10.1109/JSEN.2009.2037802
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We develop a realistic, physics based, practical RF circuit model for the AC impedance of a quantum point contact that includes the ohmic contacts, the on-chip "lead" resistance and kinetic inductance, and the quantum point contact impedance itself. The kinetic inductance of the electrons in the "leads" in series with the quantum point contact capacitance form a resonant tank circuit whose resonant frequency depends on the width of the quantum point contact channel. These measurements probe devices in the following qualitative regime: They are in the ballistic limit, and the measurement frequency is higher than the electron scattering frequency.
引用
收藏
页码:391 / 394
页数:4
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