An Ag/HfO2/Pt Threshold Switching Device with an Ultra-Low Leakage (< 10 fA), High On/Off Ratio (> 1011), and Low Threshold Voltage (< 0.2 V) for Energy-Efficient Neuromorphic Computing

被引：10
作者：
Chekol, Solomon Amsalu [1 ,2 ]
Cueppers, Felix [1 ,2 ]
Waser, Rainer [1 ,2 ,3 ,4 ]
Hoffmann-Eifert, Susanne [1 ,2 ]
机构：
[1] Forschungszentrum Julich, Peter Grunberg Inst, D-52428 Julich, Germany
[2] Forschungszentrum Julich, JARA FIT, D-52428 Julich, Germany
[3] Rhein Westfal TH Aachen, IWE II, D-52078 Aachen, Germany
[4] Rhein Westfal TH Aachen, JARA FIT, D-52078 Aachen, Germany
来源：
2021 IEEE INTERNATIONAL MEMORY WORKSHOP (IMW) | 2021年
关键词：
threshold switching; artificial neuron; low power; integrate-and-fire; SELECTOR;
D O I：
10.1109/IMW51353.2021.9439601
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Threshold switching (TS) devices are of great interest for low power artificial neuron applications. In this work, we present an Ag/HfO2/Pt based TS device with an ultra-low leakage current (< 10 fA), a large on-to-off ratio (> 10(11)), fast turn-on and turn-off speeds (< 300 ns and < 250 ns, respectively), low threshold voltage (< 0.2 V), and a stable TS performance. Furthermore, we demonstrate the integrate-and-fire (I&F) neuron functionality of our device experimentally. The inherent stochastic behavior and simple structure make TS devices an ideal candidate for replacing the complex and large-size CMOS (complementary metal-oxide-semiconductor) based neurons. This paves the way towards building energy- and area-efficient neuromorphic systems.
引用
收藏
页码：115 / 118
页数：4
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