Electronic and magnetic properties of FeSe thin film prepared on GaAs (001) substrate by metal-organic chemical vapor deposition

被引：34
作者：
Liu, K. W. [1 ]
Zhang, J. Y.
Shen, D. Z.
Shan, C. X.
Li, B. H.
Lu, Y. M.
Fan, X. W.
机构：
[1] Chinese Acad Sci, Key Lab Excited State Proc, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 26期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1063/1.2751578
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
FeSe film was prepared on GaAs (001) substrate by low pressure metal-organic chemical vapor deposition. The x-ray diffraction measurement indicated that the sample was preferentially oriented with tetragonal structure. The structure relationship between FeSe epilayer and GaAs (001) substrate has been studied. The critical behavior in the temperature-dependent resistivity at similar to 290 K is close to the Curie temperature, which confirmed that the transformation from ferromagnetism to paramagnetism could be responsible for the critical behavior. (c) 2007 American Institute of Physics.
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页数：3
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