Origin of reverse annealing effect in hydrogen-implanted silicon

被引：7

作者：

Di, Z. F. ^{[1
]}

Wang, Y. Q. ^{[1
]}

Nastasi, M. ^{[1
]}

Theodore, N. David ^{[2
]}

机构：

[1] Los Alamos Natl Lab, Los Alamos, NM 87545 USA

[2] Freescale Semicond Inc, Silicon Technol Solut, Tempe, AZ 85284 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 15期

关键词：

annealing; channelling; elemental semiconductors; hydrogen; ion implantation; nucleation; silicon; DEFECTS; GROWTH; SI;

D O I：

10.1063/1.3396987

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In contradiction to conventional damage annealing, thermally annealed H-implanted Si exhibits an increase in damage or reverse annealing behavior, whose mechanism has remained elusive. In this work, we conclusively elucidate that the reverse annealing effect is due to the nucleation and growth of hydrogen-induced platelets. Platelets are responsible for an increase in the height and width of the channeling damage peak following increased isochronal anneals.

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页数：3

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