Improved Thermoelectric Performance of Higher Manganese Silicides with Ge Additions

被引：87

作者：

Zhou, A. J. ^{[1
,2
]}

Zhu, T. J. ^{[1
]}

Zhao, X. B. ^{[1
]}

Yang, S. H. ^{[1
]}

Dasgupta, T. ^{[2
]}

Stiewe, C. ^{[2
]}

Hassdorf, R. ^{[2
]}

Mueller, E. ^{[2
]}

机构：

[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

[2] German Aerosp Ctr DLR, Inst Mat Res, D-51147 Cologne, Germany

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2010年 / 39卷 / 09期

基金：

中国国家自然科学基金;

关键词：

Higher manganese silicides; Ge additions; thermoelectric properties; hot-pressing; CRYSTAL-GROWTH; FILMS; MNSI;

D O I：

10.1007/s11664-009-1034-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Polycrystalline higher manganese silicides (HMS) with Ge additions were prepared by induction melting followed by hot-pressing. The phase structures and microstructure of the pellets were investigated, and their thermoelectric properties were measured from room temperature to 650 degrees C. It was found that the solubility of Ge in HMS was limited to around 1.6%, beyond which an extra phase of SiyGe1-y appeared. The electrical conductivity was continuously enhanced by Ge additions, while the Seebeck coefficient was slightly decreased. The thermal conductivity showed first a decreasing then an increasing relationship with increasing Ge additions. The HMS cells, mainly along the c-axis, were remarkably enlarged by the substitution of Ge, which probably resulted in the enhancement of phonon scattering due to an increased number of defects, reducing the phonon thermal conductivity. The dimensionless figure of merit of the optimized HMS polycrystals was improved by more than 30% compared with the pure HMS material.

引用

页码：2002 / 2007

页数：6

共 25 条

[1] Effects of ge doping on micromorphology of MnSi in MnSi∼1.7 and on their thermoelectric transport properties [J].

Aoyama, I ;

Fedorov, MI ;

Zaitsev, VK ;

Solomkin, FY ;

Eremin, IS ;

Samunin, AY ;

Mukoujima, M ;

Sano, S ;

Tsuji, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (12) :8562-8570

[2]

Borisenko V.E., 2000, Semiconducting Silicides

[3]

Fedorov M., 2005, THERMOELECTRICS HDB, DOI 10.1201/9781420038903.ch31.

[4] Thermoelectric elements based on compounds of silicon and transition metals [J].

Fedorov, MI ;

Zaitsev, VK ;

Solomkin, FY ;

Vedernikov, MV .

TECHNICAL PHYSICS LETTERS, 1997, 23 (08) :602-603

[5] Thermoelectric properties of p-type higher manganese silicide films prepared by solid phase reaction and reactive deposition [J].

Hou, Q. R. ;

Zhao, W. ;

Chen, Y. B. ;

Liang, D. ;

Feng, X. ;

Zhang, H. Y. ;

He, Y. J. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (10) :3429-3437

[6] Thermoelectric properties of higher manganese silicide films with addition of chromium [J].

Hou, Q. R. ;

Zhao, W. ;

Chen, Y. B. ;

Liang, D. ;

Feng, X. ;

Zhang, H. Y. ;

He, Y. J. .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2007, 86 (03) :385-389

[7] Thermoelectric properties of higher manganese silicide films with addition of carbon [J].

Hou, Q. R. ;

Zhao, W. ;

Zhang, H. Y. ;

Chen, Y. B. ;

He, Y. J. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2006, 203 (10) :2468-2477

[8] Synthesis of Thermoelectric Manganese Silicide by Mechanical Alloying and Pulse Discharge Sintering [J].

Itoh, Takashi ;

Yamada, Masataka .

JOURNAL OF ELECTRONIC MATERIALS, 2009, 38 (07) :925-929

[9]

KARPINSKII OG, 1969, IZVESTIYA AKAD NAUK, V0005

[10] CRYSTAL-GROWTH AND CHARACTERIZATION OF MNSI-1.73 [J].

KAWASUMI, I ;

SAKATA, M ;

NISHIDA, I ;

MASUMOTO, K .

JOURNAL OF CRYSTAL GROWTH, 1980, 49 (04) :651-658

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