Single-Pole Double-Thru and True Time Delay Lines in Alumina Packaging Based on RF MEMS Switches in Silicon Technology

被引:0
作者
De Angelis, Giorgio [1 ]
Lucibello, Andrea [1 ]
Marcelli, Romolo [1 ]
Catoni, Simone [1 ]
Lanciano, Antonio [2 ]
Buttiglione, Roberta [2 ]
Dispenza, Massimiliano [2 ]
Giacomozzi, Flavio [3 ]
Margesin, Benno [3 ]
Maglione, Alfredo [4 ]
Erspan, Mirko [4 ]
Combi, Chantal [5 ]
机构
[1] CNR, IMM Roma, I-00133 Rome, Italy
[2] SELEX SI, I-00131 Rome, Italy
[3] FBK Irst, I-38100 Povo, TN, Italy
[4] OPTOI, I-38100 Gardolo, TN, Italy
[5] ST Microelect, Milan, Italy
来源
ROMANIAN JOURNAL OF INFORMATION SCIENCE AND TECHNOLOGY | 2009年 / 12卷 / 03期
关键词
RF MEMS; SPST; SPDT; TTDL; packaging; NETWORK;
D O I
暂无
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
Packaged MEMS devices for RF applications have been modelled, realized and tested. In particular, RF MEMS single ohmic series switches have been obtained on silicon high resistivity substrates and they have been integrated in alumina packages to get single-pole-double-thru (SPDT) and true-time-delay-line(TTDL) configurations. For this purpose, the individual switches have been considered as the building blocks of more complicated structures, and the alumina substrate has been properly tailored in order to get the beset electrical performance considering all the technological steps necessary for the final hybrid device. Actually, several parameters and processes have been considered for such an optimization, involving the geometry, the wire bonding and the cover to be used. Test structures with technologically actuated switches have been also manufactured in order to have the best reference result for the proposed structures. After that, the same devices have been packaged for the final test. As a result, TTDLs for wideband operation, specifically designed for the (6-18) GHz band, have been obtained, with insertion losses less than 2 dB up to 14 GHz for the short path and 3 dB for the long path (5 dB for the real device), and delay times in the order of 0.3-0.4 ns for the short path and 0.5-0.6 ns for the long path. The maximum differential delay time is in the order of 0.2 ns.
引用
收藏
页码:283 / 307
页数:25
相关论文
共 6 条
  • [1] Barker NS, 1998, IEEE T MICROW THEORY, V46, P1881, DOI 10.1109/22.734503
  • [2] A Ka-band 3-bit RF MEMS true-time-delay network
    Hacker, JB
    Mihailovich, RE
    Kim, M
    DeNatale, JF
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2003, 51 (01) : 305 - 308
  • [3] A DC-to-40 CHz four-bit RF MEMS true-time delay network
    Kim, M
    Hacker, JB
    Mihailovich, RE
    DeNatale, JE
    [J]. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2001, 11 (02) : 56 - 58
  • [4] Lenkkeri J., 2005, Advancing Microelectronics, V32, P9
  • [5] Rebeiz G. M., 2003, RF MEMS: Theory, Design, and Technology
  • [6] TUOMINEN J, 2006, P IMAPS NORD ANN C G, P166