Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD

被引：21

作者：

Liu, Zhe ^{[1
]}

Wang, Xiaoliang ^{[1
]}

Wang, Junxi ^{[1
]}

Hu, Guoxin ^{[1
]}

Guo, Lunchun ^{[1
]}

Li, Jianping ^{[1
]}

Li, Jinmin ^{[1
]}

Zeng, Yiping ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 298卷

关键词：

characterization; crystal morphology; interfaces; metalorganic chemical vapor deposition; superlattices; nitrides;

D O I：

10.1016/j.jcrysgro.2006.10.028

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Low temperature (LT) AlN interlayer and insertion of superlattice are two effective methods to reduce crack and defects for GaN grown on Si substrate. In this paper, the influence of two kinds of buffer on stress, morphology and defects of GaN/Si are studied and discussed. The results measured by optical microscope and Raman shift show that insertion of superlattice is more effective than insertion of LT-AlN in preventing the formation of cracks in GaN grown on Si substrate. Cross-sectional TEM images show that the not only screw but edge-type dislocation densities are greatly reduced by using the superlattice buffer. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：281 / 283

页数：3

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